[논문]CHARACTERISTICS OF FABRICATED SiC RADIATION DETECTORS FOR FAST NEUTRON DETECTION

Lee, Cheol-Ho; Kim, Han-Soo; Ha, Jang-Ho; Park, Se-Hwan; Park, Hyeon-Seo; Kim, Gi-Dong; Park, June-Sic; Kim, Yong-Kyun

doi:10.14407/jrp.2012.37.2.070

CHARACTERISTICS OF FABRICATED SiC RADIATION DETECTORS FOR FAST NEUTRON DETECTION 원문보기

방사선방어학회지 = Radiation protection : the journal of the Korean association for radiation protection, v.37 no.2, 2012년, pp.70 - 74

Lee, Cheol-Ho (Department of Nuclear Engineering, Hanyang University) , Kim, Han-Soo (Korea Atomic Energy Research Institute) , Ha, Jang-Ho (Korea Atomic Energy Research Institute) , Park, Se-Hwan (Korea Atomic Energy Research Institute) , Park, Hyeon-Seo (Korea Research Institute of Standards and Science) , Kim, Gi-Dong (Korea Institute of Geoscience and Mineral Resources) , Park, June-Sic (Department of Nuclear Engineering, Hanyang University) , Kim, Yong-Kyun (Department of Nuclear Engineering, Hanyang University)

Abstract ▼ AI-Helper

Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a $^{252}Cf$ neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

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제안 방법

In this study, two types of PIN-type SiC semiconductor radiation detectors were designed and fabricated to measure thermal/fast neutrons in the harsh environment of a nuclear reactor. As a preliminary test, the neutron reaction probability of the SiC detector was calculated by using an MCNPX code to confirm nuclear reactions between neutrons and the SiC detectors. Neutron responses were measured by using a ²⁵²Cf neutron source at KRISS and a Tandem accelerator at KIGAM.
In this study, two PIN-type SiC semiconductor detectors were designed and fabricated to detect fast neutrons for application in next-generation NPP reactors. In experiments, the I-V measurements were performed to confirm the diode characteristic of the detectors, and neutron responses were obtained by using a ²⁵²Cf neutron source (KRISS) and a Tandem accelerator (KIGAM).
Therefore, they can be used in Generation IV reactors and commercial NPPs. In this study, two types of PIN-type SiC semiconductor radiation detectors were designed and fabricated to measure thermal/fast neutrons in the harsh environment of a nuclear reactor. As a preliminary test, the neutron reaction probability of the SiC detector was calculated by using an MCNPX code to confirm nuclear reactions between neutrons and the SiC detectors.
The neutron reactions used in the calculation are 6Li(n,α)3 H for thermal neutron detection and 12C(n,n' )12C and 28Si(n,n' )28Si scattering for fast neutron detection, respectively.

대상 데이터

For thermal neutron detection, [3] if a converter such as ⁶LiF is mounted on the SiC material, it can emit a charged particle from the ⁶Li(n,α)³ H nuclear reaction. In this study, two PIN-type SiC semiconductor detectors were designed and fabricated to detect fast neutrons for application in next-generation NPP reactors. In experiments, the I-V measurements were performed to confirm the diode characteristic of the detectors, and neutron responses were obtained by using a ²⁵²Cf neutron source (KRISS) and a Tandem accelerator (KIGAM).

이론/모형

As a preliminary test, the neutron detection efficiencies were calculated by using an MCNPX code with respect to neutron energies [7]. The neutron reactions used in the calculation are ⁶Li(n,α)³ H for thermal neutron detection and ¹²C(n,n` )¹²C and ²⁸Si(n,n` )²⁸Si scattering for fast neutron detection, respectively.

참고문헌 (7)

Ruddy FH, Dulloo AR, Seidel JG, F. W. Hantz, Grobmyer LR. Nuclear reactor power monitoring using silicon carbide semiconductor radiation detectors. Nulcear Technology. 2002;140(2):198-208.
Ruddy FH, Dulloo AR, Seidel JG, Palmour JW, Singh R. The charged particle response of silicon carbide semiconductor radiation detector. Nucl. Instrum. Methods Phys. Res., Sect. A. 2003; 505:159-162.

상세보기
Flammang RW, Seidel JG, Ruddy FH. Fast neutron detection with silicon carbide semiconductor radiation detectors. Nucl. Instrum. Methods Phys. Res., Sect. A. 2007;579:177-179.

상세보기
Manfredotti C, Giudice AL, Fasolo F, Vittone E, Paolini C, Fizzotti F, Zanini A, Wagner G, Lanzieri C. Silicon carbide detectors for neutron monitoring. Nucl. Instrum. Methods Phys. Res., Sect. A. 2005;552:131-137.

상세보기
Ruddy FH, Dulloo AR, Member, IEEE, Seidel JG, Das MK, Ryu SH, Agarwal AK. The fast neutron response of 4H silicon carbide semiconductor radiation detectors. IEEE T. Nucl. Sci. 2006;53(3):1666-1670.

상세보기
Benmaza H, Akkal B, Abid H, Bluer JM, Anani M, Bensaad Z. Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode. Microelectron. J. 2008;39:80-84.

상세보기
L.S. Waters (Ed.). MCNPXTM User's Manual. New Mexico; Los Alamos National Laboratory. 2002.

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