[논문]Evaluation of 1.3-㎛ Wavelength VCSELs Grown by Metal Organic Chemical Vapor Deposition for 10 Gb/s Fiber Transmission

Park, Chanwook; Lee, Seoung Hun; Jung, Hae Won; An, Shinmo; Lee, El-Hang; Yoo, Byueng-Su; Roh, Jay; Kim, Kyong Hon

doi:10.3807/josk.2012.16.3.313

Evaluation of 1.3-㎛ Wavelength VCSELs Grown by Metal Organic Chemical Vapor Deposition for 10 Gb/s Fiber Transmission 원문보기

Journal of the Optical Society of Korea, v.16 no.3, 2012년, pp.313 - 317

Park, Chanwook (Department of Physics, Inha University) , Lee, Seoung Hun (Department of Physics, Inha University) , Jung, Hae Won (Department of Physics, Inha University) , An, Shinmo (School of Information and Communication Engineering, Inha University) , Lee, El-Hang (School of Information and Communication Engineering, Inha University) , Yoo, Byueng-Su (RayCan Co., Ltd.) , Roh, Jay (RayCan Co., Ltd.) , Kim, Kyong Hon (Department of Physics, Inha University)

Abstract ▼ AI-Helper

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

주제어

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제안 방법

In this experimental study, we evaluate 10 Gb/s data transmission performance of 1.3 μm wavelength VCSELs whose bottom and active layers were grown by an MOCVD method in a one-step epitaxial growth process and whose top reflecting layer was formed with a dielectric mirror.
The BER measurement was conducted four times for each of the BTB and 10-km long SMF transmission at each temperature condition. The average values with error bars corresponding to the standard deviation of four measured data were plotted in Figs.

대상 데이터

The bottom DBRs were grown as undoped-InAlGaAs/InAlAs layers. A dielectric DBR mirror and an Au metal layer were used at the top DBRs. The details of the VCSEL structure except the top InAlGaAs-InAlAs DBR layers replaced with a dielectric DBR mirror can be found in reference [5].

성능/효과

The board was interfaced with a computer with a USB cable and was controlled with a computer program. It provided an optimized DC bias and modulation current input as well as an improved high-frequency modulation signal transfer capability. The VCSEL was driven by a pulse pattern generator (PPG, Anritsu MP1763C) with a Non-Return-To-Zero (NRZ) modulation data signal having a 2³¹-1 PRBS pattern.
The experimental results indicate that the InAlGaAs-InP VCSEL grown by the MOCVD could be a low cost, reliable and low power consuming optical signal source for optical fiber communications at the wavelength of 1.3 μm.
4 dBm for an error rate of 10^-12. The measured results indicate that there is no significant difference between the BER curves for the operating temperatures up to 60℃ and no notable power penalty is observed even after the 10-km long SMF transmission compared to the BTB cases. The error bar of the BER data, which corresponds to the standard deviation for the run-to-run measurements at each operating condition, is shown to be relatively very small or comparable to the symbol size except for a few cases as plotted in Figs.

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