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NTIS 바로가기Journal of semiconductor technology and science, v.14 no.3, 2014년, pp.268 - 273
Kim, Kwanyong (Department of Electronic Engineering, Sogang University) , Lee, Kwangseok (Department of Electronic Engineering, Sogang University) , Lee, Keun-Ho (Department of Electronic Engineering, Sogang University) , Park, Young-Kwan (Department of Electronic Engineering, Sogang University) , Choi, Woo Young (Department of Electronic Engineering, Sogang University)
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our mod...
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M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H. Seo, S. Seo, U.-I. Chung, I.-K, Yoo, and K. Kim, "A fast, highendurance and scalable non-volatile memory device made from asymmetric $Ta_2O_{5-x}/TaO_{2-x}$ bilayer structures," Nat. Mater., vol. 10, no. 8, pp. 625-630, Aug. 2011.
B.Govoreanu, G.S.Kar, Y-Y.Chen, V.Paraschiv, S. Kubicek, A.Fantini, I.P.Radu, L.Goux, S.Clima, R.Degraeve, N.Jossart, O.Richard, T.Vandeweyer, K.Seo, P.Hendrickx, G. Pourtois, H.Bender, L.Altimime, D.J.Wouters, J.A.Kittl, and M.Jurczak, " $10x10nm^2$ $Hf/HfO_x$ crossbar resistive RAM with excellent performance, reliability and low-energy operation," in IEDM Tech. Dig., 2011, pp. 31.6.1-31.6.4.
S. B. Lee, J. S. Lee, S. H. Chang, H. K. Yoo, B. S. Kang, B. Kahng, M.-J. Lee, C. J. Kim, and T. W. Noh, "Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching," Appl. Phys. Lett., vol. 98, no. 3, pp. 033502.1-033502.3, Jan. 2011.
S. Yu, X. Guan, and H.-S. Philip Wong, "On the stochastic nature of resistive switching in metal oxide RRAM: physical modeling, Monte Carlo simulation, and experimental characterization," in IEDM Tech. Dig., 2011, pp. 17.3.1-17.3.4.
D. Ielmini, "Modeling the universal set/reset characteristics of bipolar RRAM by field- and temperature-driven filament growth," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4309-4317, Dec. 2011.
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ATLAS User's Manual, SILVACO, Santa Clara, CA, 2010.
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