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[국내논문] A Finite Element Model for Bipolar Resistive Random Access Memory 원문보기

Journal of semiconductor technology and science, v.14 no.3, 2014년, pp.268 - 273  

Kim, Kwanyong (Department of Electronic Engineering, Sogang University) ,  Lee, Kwangseok (Department of Electronic Engineering, Sogang University) ,  Lee, Keun-Ho (Department of Electronic Engineering, Sogang University) ,  Park, Young-Kwan (Department of Electronic Engineering, Sogang University) ,  Choi, Woo Young (Department of Electronic Engineering, Sogang University)

Abstract AI-Helper 아이콘AI-Helper

The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our mod...

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제안 방법

  • The unified model for bipolar RRAM has been proposed for forming, reset and set operation considering interface effects. Unlike conventional RRAM models, the proposed model based on FEM can simulate realistic cell structure with higher accuracy and characterize various kinds of technical issues of RRAM: multi-bit operation and initial defect effects.

대상 데이터

  • 01 µm2 . 40 RRAM devices have been used.
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참고문헌 (19)

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  9. R. Bruchhaus, R. Muenstermann, T. Menke, C. Hermes, F. Lentz, R. Weng, R. Dittmann, R. Waser, "Bipolar resistive switching in oxides: mechanisms and scaling," Curr. Appl. Phys., vol. 11, no. 2, pp. 75-78, Feb. 2011. 

  10. ATLAS User's Manual, SILVACO, Santa Clara, CA, 2010. 

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