Abstract ▼ AI-Helper

To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-sh...

To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.

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