[논문]Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design

Park, Jun-Chul; Yoo, Chan-Sei; Kim, Dongsu; Lee, Woo-Sung; Yook, Jong-Gwan

doi:10.5515/jkiees.2014.14.3.284

[국내논문] Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design 원문보기

Journal of electromagnetic engineering and science : JEES, v.14 no.3, 2014년, pp.284 - 292

Park, Jun-Chul (Electrical and Electronic Engineering Department, Yonsei University) , Yoo, Chan-Sei (Electronic Materials & Device Research Center, Korea Electronics Technology Institute) , Kim, Dongsu (Packaging Research Center, Korea Electronics Technology Institute) , Lee, Woo-Sung (Electronic Materials & Device Research Center, Korea Electronics Technology Institute) , Yook, Jong-Gwan (Electrical and Electronic Engineering Department, Yonsei University)

Abstract ▼ AI-Helper

This paper presents a characteristic evaluation of commercial gallium nitride (GaN) transistors having two different gate-lengths of $0.4-{\mu}m$ and $0.25-{\mu}m$ in the design of a class-S power amplifier (PA). Class-S PA is operated by a random pulse-width input signal from band-pass delta-sigma modulation and has to deal with harmonics that consider quantization noise. Although a transistor having a short gate-length has an advantage of efficient operation at higher frequency for harmonics of the pulse signal, several problems can arise, such as the cost and export license of a $0.25-{\mu}m$ transistor. The possibility of using a $0.4-{\mu}m$ transistor on a class-S PA at 955 MHz is evaluated by comparing the frequency characteristics of GaN transistors having two different gate-lengths and extracting the intrinsic parameters as a shape of the simplified switch-based model. In addition, the effectiveness of the switch model is evaluated by currentmode class-D (CMCD) simulation. Finally, device characteristics are compared in terms of current-mode class-S PA. The analyses of the CMCD PA reveal that although the efficiency of $0.4-{\mu}m$ transistor decreases more as the operating frequency increases from 955 MHz to 3,500 MHz due to the efficiency limitation at the higher frequency region, it shows similar power and efficiency of 41.6 dBm and 49%, respectively, at 955 MHz when compared to the $0.25-{\mu}m$ transistor.

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문제 정의

This paper describes a process for the selection of an adequate transistor among the commercial GaN transistors having two different gate-lengths for class-S PA design. First, the basic characteristics of the GaN transistor with two gate-lengths of 0.

제안 방법

Considering this trend, the simulation models by CREE Inc., which utilize GaN transistors with two different gate lengths of 0.4-μm and 0.25-μm, are used to evaluate the characteristics of the transistor in terms of CMCD and CMCS PA.
First, the basic characteristics of the GaN transistor with two gate-lengths of 0.4-μm and 0.25-μm are analyzed by extracting fT, fmax, and using a simplified switch-based model.
In this paper, the possibility of using a transistor having a 0.4-μm gate-length on a class-S PA at 955 MHz in comparison to a 0.25-μm transistor is evaluated by examining the small-signal characteristics, such as maximum available gain as well as current gain, using a commercial GaN transistor having two different gate-lengths and similar output power.
These models are extracted for the condition where the desired bias voltage and frequency are 10 V and 955 MHz, respectively. The simplified switch-based model is verified by also employing behavioral models of the same transistors in this simulation.

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[국내논문] Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design 원문보기

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[국내논문] Evaluation of GaN Transistors Having Two Different Gate-Lengths for Class-S PA Design 원문보기

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