[논문]Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

doi:10.5573/jsts.2016.16.2.147

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device 원문보기

Journal of semiconductor technology and science, v.16 no.2, 2016년, pp.147 - 152

Kim, Sungjun (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University) , Cho, Seongjae (Department of Electronic Engineering, Gachon University) , Park, Byung-Gook (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University)

Abstract ▼ AI-Helper

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

주제어

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가설 설정

6. Energy-band diagrams (a) MIM, (b) MIS structures under flat-band conditions, (c) MIM, (d) MIS structures under equilibrium.

제안 방법

RRAM devices based on conventional metal-insulator-metal (MIM) structure have been widely researched, whereas metal-insulator-silicon (MIS) structure which can be integrated with CMOS circuits (the easiness is improved if 1T1R structure is adopted) has been seldom studied so far [5, 6, 9]. In this work, in order to further study RRAM device in the MIS structure, we discuss different resistive switching behaviors between RRAM cells having TiN and p⁺ Si.

대상 데이터

1(a) and (b) show the schematic of RRAM cells having MIM structure, Ag/Si₃N₄/TiN, and MIS structure, Ag/Si₃N₄ /Si, respectively. For the MIM device, a 100-nm-thick TiN bottom electrode (BE) was deposited using a thermal evaporator after SiO₂ deposition on the Si substrate. On the other hand, the BE of MIS device was formed in the Si substrate by ion implantation of BF₂⁺ (an acceleration energy of 40 keV and with a dose of 5×10¹⁵ cm^-2).

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