[논문]Influence of Selenization Pressure on Properties of CIGS Absorber Layer Prepared by RF Sputtering

Jung, Sung Hee; Choi, Ji Hyun; Chung, Chee Won

doi:10.21218/cpr.2016.4.3.087

[국내논문] Influence of Selenization Pressure on Properties of CIGS Absorber Layer Prepared by RF Sputtering 원문보기

Current photovoltaic research = 한국태양광발전학회논문지, v.4 no.3, 2016년, pp.87 - 92

Jung, Sung Hee (Department of Chemistry and Chemical Engineering, Center for Design and Applications of Molecular Catalysts, Inha University) , Choi, Ji Hyun (Department of Chemistry and Chemical Engineering, Center for Design and Applications of Molecular Catalysts, Inha University) , Chung, Chee Won (Department of Chemistry and Chemical Engineering, Center for Design and Applications of Molecular Catalysts, Inha University)

Abstract ▼ AI-Helper

The effects of selenization pressure on the structural, optical and electrical properties of the CIGS thin films prepared by RF magnetron sputtering using a single quaternary target were investigated. At selenization pressures lower than atmospheric pressure, CIGS thin films formed non-stoichiometric compounds due to deficiencies of Se vapor. In contrast, when selenization process was conducted at above atmospheric pressure, the residence time of Se vapor inside the tube increased so that the Se element could be incorporated within vacant sites of the CIGS structure, resulting in the formation of stoichiometric CIGS thin films. High quality CIGS thin films could be obtained when the selenization process was performed at pressures greater than atmospheric and $550^{\circ}C$.

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제안 방법

In this study, we evaluated the effects of selenization process pressure on the structural, optical and electrical properties of CIGS films as absorber layers for photovoltaic devices. The films were deposited by RF sputtering using a quaternary Cu(In_xGa1_-x)Se₂ target and then subjected to selenization in a tube furnace.
The thickness of the CIGS films was measured using a surface profiler (Tencor-P1), while X-ray diffraction (XRD) analysis (Philips X’Pert PRO XRD system, Cu Kα irradiation, λ= 1.50405 Å) was employed to examine the crystalline structure of the films.

대상 데이터

5 μm thick Mo layer that had been deposited by DC sputtering. A 3 inch diameter target composed of the quaternary components of Cu, In, Ga and Se was employed. The compositional ratio of the target was 25:17.

이론/모형

The carrier concentration and resistivity of the films were measured using the Van der Pauw method through the Hall effect measurement system (HMS-3000) in a 0.55 T magnetic field at room temperature and Indium soldering was applied to the film's surface as the ohmic contact.

참고문헌 (17)

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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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[국내논문] Influence of Selenization Pressure on Properties of CIGS Absorber Layer Prepared by RF Sputtering 원문보기

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[국내논문] Influence of Selenization Pressure on Properties of CIGS Absorber Layer Prepared by RF Sputtering 원문보기

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