[논문]Characteristics of Ti Thin films and Application as a Working Electrode in TCO-Less Dye-Sensitized Solar Cells

Joo, Yong Hwan; Kim, Nam-Hoon; Park, Yong Seob

doi:10.4313/teem.2017.18.2.93

[국내논문] Characteristics of Ti Thin films and Application as a Working Electrode in TCO-Less Dye-Sensitized Solar Cells 원문보기

Transactions on electrical and electronic materials, v.18 no.2, 2017년, pp.93 - 96

Joo, Yong Hwan (Department of Electrical Engineering, Chosun University) , Kim, Nam-Hoon (Department of Electrical Engineering, Chosun University) , Park, Yong Seob (Department of Electronics, Chosun College of Science and Technology)

Abstract ▼ AI-Helper

The structural, electrical and optical properties of Ti thin films fabricated by dual magnetron sputtering were investigated under various film thicknesses. The fabricated Ti thin films exhibited uniform surfaces, crystallinity, various grain sizes, and with various film thicknesses. Also, the crystallinity and grain size of the Ti thin films increased with the increase of film thickness. The electrical properties of Ti thin films improved with the increase of film thickness. The results showed that the performance of TCO-less DSSC critically depended on the film thickness of the Ti working electrodes, due to the conductivity of Ti thin film. However, the maximum conversion efficiency of TCO-less DSSC was exhibited at the condition of 100 nm thickness due to the surface scattering of photons caused by the variation of grain size.

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제안 방법

The structural, electrical, and optical properties of Ti thin films, deposited by dual magnetron sputtering with a variation of thicknesses, were examined. TCO-less DSSCs, with Ti thin films as the WE, were fabricated and their photovoltaic performance was then analyzed.

대상 데이터

Two targets of pure (99.99%) 4-inch Ti, each with a diameter of 10.16 cm, were positioned about 6 cm from the substrate.
The nanocrystalline TiO₂ was sintered in a furnace at 550℃ for 60 minutes, and the Ti thin films with the various thicknesses were then deposited on the nanocrystalline TiO₂ to fabricate the WE. Dye (N719) was adsorbed into TiO₂ by immersing the TiO₂ in the dye for 24 hours following the deposition of Ti thin films. The CE was prepared by sintering at 450℃ for 30 minutes after coating PtCl₄ on the FTO-glass with two holes.

이론/모형

02°. The transmittance and reflectivity of Ti films were measured using Cary 500 Scan measurement (Varian COMPANY). The electrical characteristics were measured using a 4-point probe (CHANG MIN Co.
As seen in the XRD pattern, the peak intensity of the Ti (100) orientation was slightly increased with the increased thickness of the Ti thin films. Also, the crystal size was determined by the Gaussian fitting method from the XRD diffraction pattern. The maximum half width of the angle and diffraction peak was obtained by Gaussian fitting.

성능/효과

As seen from the surface, the surface morphologies show uniform and smooth surfaces regardless of film thickness. As shown by the measured values of the root mean square (RMS) surface roughness (R_ms) according to the thickness, the R_ms surface roughness value of Ti thin films increased from 3.2 nm to 7.4 nm as the thickness of Ti thin films was increased. As confirmed by FESEM results, this the increase in R_ms is related to the increased surface temperature during sputtering, and the increase of the surface temperature of thin films contributed to the crystallinity of thin films.
65, respectively. It was confirmed that the changes in J_sc and FF were closely related to the changes in the resistance of thin films depending on the variation of the thickness of the Ti thin films, and that the changes in the thickness of thin films were due to the changes in equivalent series resistance. However, the conversion efficiency of TCO-less DSSC was found to decrease when the thickness of the Ti thin film was 200 nm or more.
However, the conversion efficiency of TCO-less DSSC was found to decrease when the thickness of the Ti thin film was 200 nm or more. These results showed that as the thickness of metallic thin films increased, the crystallinity of the thin films increased, and the grain size of the surface also increased. Such changes in the grain size of the surface resulted in a greater loss of the light that was incident on and transmitted through the TiO₂ photoanode from the thin film surface of the electrode.
Thin films were fabricated by a sputtering device. It was observed that, as the thickness of the Ti metal electrodes was increased, the values of resistivity and surface resistance decreased, the electrical conductivity improved, and the surface roughness increased. Consequently, the increase in the thickness of thin films led to their increased crystallinity, which resulted in the increase in the grain size of the surface of the thin films.
These changes reduced the transmission of light, resulting in a loss of light due to the light scattering. In conclusion, the maximum value of the conversion efficiency of TCO-less DSSCs with Ti WE was observed when the thickness of the Ti thin film was 100 nm. It is suggested in this study that this is due to the optimization of the conduction characteristics, transmission properties, and surface properties of the Ti thin films.

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