[논문]Clamping-diode Circuit for Marine Controlled-source Electromagnetic Transmitters

Song, Hongxi; Zhang, Yiming; Gao, Junxia; Zhang, Yu; Feng, Xinyue

doi:10.6113/jpe.2018.18.2.395

Clamping-diode Circuit for Marine Controlled-source Electromagnetic Transmitters 원문보기

Journal of power electronics, v.18 no.2, 2018년, pp.395 - 406

Song, Hongxi (Faculty of Information Technology, Beijing University of Technology) , Zhang, Yiming (Faculty of Information Technology, Beijing University of Technology) , Gao, Junxia (Faculty of Information Technology, Beijing University of Technology) , Zhang, Yu (Faculty of Information Technology, Beijing University of Technology) , Feng, Xinyue (Faculty of Information Technology, Beijing University of Technology)

Abstract ▼ AI-Helper

Marine controlled-source electromagnetic transmitters (MCSETs) are important in marine electromagnetic exploration systems. They play a crucial role in the exploration of solid mineral resources, marine oil, and gas and in marine engineering evaluation. A DC-DC controlled-source circuit is typically used in traditional MCSETs, but using this circuit in MCSETs causes several problems, such as large voltage ringing of the high-frequency diode, heating of the insulated-gate bipolar transistor (IGBT) module, high temperature of the high-frequency transformer, loss of the duty cycle, and low transmission efficiency of the controlled-source circuit. This paper presents a clamping-diode circuit for MCSET (CDC-MCSET). Clamping diodes are added to the controlled-source circuit to reduce the loss of the duty ratio and the voltage peak of the high-frequency diode. The temperature of the high-frequency diode, IGBT module, and transformer is decreased, and the service life of these devices is prolonged. The power transmission efficiency of the controlled-source circuit is also improved. Saber simulation and a 20 KW MCSET are used to verify the correctness and effectiveness of the proposed CDC-MCSET.

주제어

표/그림 (21)

그림 Fig. 1. Overall structural diagram of MCSET.
그림 Fig. 2. Traditional controlled-source circuit.
그림 Fig. 3. Traditional controlled-source circuit waveform.
그림 Fig. 4. Schematic of the buffer circuit.
그림 Fig. 5. Clamping-diode controlled-source circuit.
그림 Fig. 6. Clamping-diode controlled-source circuit waveform.
그림 Fig. 7. Clamping-diode controlled-source equivalent circuit.
그림 Fig. 8. Transformer interlayer equivalent capacitance.
그림 Fig. 9. High-frequency diode equivalent circuit. (a) Diode forward-conduction equivalent circuit. (b) Diode reverse-blockingequivalent circuit.
그림 Fig. 10. Drive simulation waveforms of S1, S2, S3, and S4 IGBTtubes.
그림 Fig. 11. T-CSC simulation waveform. Us is the secondaryvoltage waveform of the transformer, Ud is the high-frequencydiode output voltage waveform, Uab is the primary voltagewaveform of the transformer between “a” and “b,” and iP is theprimary voltage waveform of the transformer.
표 TABLE I PARAMETERS OF THE CONTROLLED-SOURCE CIRCUIT
그림 Fig. 12. CD-CSC waveform. Uab is the primary voltagewaveform of the transformer between “c” and “b”, Ud is thehigh-frequency diode output voltage waveform, iD7 is the diodeD7 current, iD8 is the diode D8 current, ip is the primary currentwaveform of the transformer, iL1 is the resonant inductor L1current, and Uab is the primary voltage waveform of thetransformer between “a” and “b.”
그림 Fig. 13. MCSET physical diagram.
그림 Fig. 14. T-MCSET physical waveform. Ud is the high-frequencydiode voltage, US3 is voltage waveform of the lagging switch S3,Uab is the primary voltage waveform of the transformer, and iP isthe primary current waveform of the transformer.
그림 Fig. 15. CDC-MCSET physical waveform. (a) Ud is the high-frequency diode output voltage waveform, Us is the secondary voltagewaveform of the transformer, Uab is the primary voltage waveform of the transformer between “a” and “b”, and ip is the primarycurrent waveform of the transformer. (b) iD7 is the diode D7 current, iD8 is the diode D8 current, and iL1 is the resonant inductor L1current.
그림 Fig. 16. Temperature curve of the MCSET key components.
그림 Fig. 17. Comparison of output voltage Uo and input voltage Uin.
그림 Fig. 18. Comparison of output current Io and input voltage Uin.
그림 Fig. 19. Comparison of efficiency and load current.
그림 Fig. 20. CDC-MCSET emitting the voltage waveform Vop andthe current waveform Iop.

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