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참고문헌 (14)

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6. https://www.infineon.com/dgdl/infineon-Article_Advantages_of_the_1200V_SiC_Schottky_Diode_with_MPS_Design-ART-v01_00-EN.pdf. 

7. https://www.rohm.com.tw/documents/11425/994734/120517.pdf. 

8. T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano, and H. Matsunami, "Interface properties of metal-oxide-semiconductor structures on 4H -SiC{0001} and (1120) formed by N2O oxidation," JJAP, 44(3), 1213(2005). 

9. M. furuhashi, T. Tanioka, M. Imaizumi, N. Miura, and S. Yamakawa, "Novel gate oxide process for realization of high threshold voltage in 4H-SiC MOSFET," ICSCRM, 2013. 

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11. T. Aichinger, G. Rescher, and G. Pobegen, "Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs," Microelectronics Reliability, Vol. 80, pp. 68-78, 2018. 

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12. W. Ni et aI., "SiC trench MOSFET with an integrated low von unipolar heterojunction diode," Materials Science Forum, Vols. 778-780, pp. 923-926, 2014. 

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13. S. Hino et al., "Demonstration of SiC-MOSFET embedding schottky barrier diode for inactivation of parasitic body diode," Materials Science Forum, Vol. 897, pp. 477-482, 2017. 

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14. 세미나 자료 

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