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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.24 no.4, 2020년, pp.1117 - 1121
양수혁 (Dept. of Electronic and Electrical Engineering, Hongik University) , 김형탁 (Dept. of Electronic and Electrical Engineering, Hongik University)
In this work, it was confirmed that a SnO2 catalyst deposited by an atomic layer deposition(ALD) process can be employed in AlGaN/GaN heterostructure FET to detect NO2 gas. The fabricated HFET sensors on AlGaN/GaN-on-Si platform demonstrated that the devices with or without n-situ SiN have sensitivi...
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