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NTIS 바로가기마이크로전자 및 패키징 학회지 = Journal of the Microelectronics and Packaging Society, v.27 no.4, 2020년, pp.19 - 24
이경렬 (경북대학교 신소재공학부 전자재료전공) , 박류빈 (경북대학교 신소재공학부 전자재료전공)
In this work, the electrical property of Si-doped β-Ga2O3 was investigated via a post-growth annealing process. The Ga2O3 samples were annealed under air (O-rich) or N2 (O-deficient) ambient at 800~1,200℃ for 30 mins. There was no correlation between the crystalline quality and the electr...
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