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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.25 no.1, 2021년, pp.15 - 24
나재엽 (Dept. of Electronics Engineering, Sogang University) , 정항산 (Dept. of Electronics Engineering, Sogang University) , 김광수 (Dept. of Electronics Engineering, Sogang University)
In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MO...
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