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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.25 no.2, 2021년, pp.344 - 349
이건희 (Dept. of Energy IT, Far East University) , 안병섭 (Dept. of Energy IT, Far East University) , 강이구 (Dept. of Energy IT, Far East University)
This paper proposes a structure in which Trench SiO2 is grown inside of Super Junction IGBT P-Pillar. When observing the electric field in 3D, we checked the region where the electric field have not affected inside of the P-Pillar. The pillar region's portion resistance is varied by the breakdown vo...
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J. W. Lee, S. G. Kim, J. D. Kim, J. G. Koo, J. Y. Lee and K. S. Nam, "Formation of Passivation Layer and Its Effect on the Defect Generation during Trench Etching," Korean Journal of Materials Research, Vol.7, no.7, pp.634-640, 1998.
H. Bartolf, A. Mihaila, I. Nistor, M. Jurisch, B. Leibold and M. Zimmermann, "Development of a 60um Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures," IEEE Transactions on Semiconductor Manufacturing, vol.26, no.4, pp. 529-541, 2013. DOI: 10.1109/TSM.2013.2272042
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