[논문]Effect of electric field on primary dark pulses in SPADs for advanced radiation detection applications

Lim, Kyung Taek; Kim, Hyoungtaek; Kim, Jinhwan; Cho, Gyuseong

doi:10.1016/j.net.2020.07.006

[국내논문] Effect of electric field on primary dark pulses in SPADs for advanced radiation detection applications 원문보기

Nuclear engineering and technology : an international journal of the Korean Nuclear Society, v.53 no.2, 2021년, pp.618 - 625

Lim, Kyung Taek (Department of Nuclear & Quantum Engineering, Korea Advanced Institute of Science and Technology) , Kim, Hyoungtaek (Korea Atomic Energy Research Institute) , Kim, Jinhwan (Department of Nuclear & Quantum Engineering, Korea Advanced Institute of Science and Technology) , Cho, Gyuseong (Department of Nuclear & Quantum Engineering, Korea Advanced Institute of Science and Technology)

Abstract ▼ AI-Helper

In this paper, the single-photon avalanche diodes (SPADs) featuring three different p-well implantation doses (∅p-well) of 5.0 × 1012, 4.0 × 1012, and 3.0 × 1012 atoms/cm2 under the identical device layouts were fabricated and characterized to evaluate the effects of field enhanced mechanisms on primary dark pulses due to the maximum electric field. From the I-V curves, the breakdown voltages were found as 23.2 V, 40.5 V, and 63.1 V with decreasing ∅p-well, respectively. By measuring DCRs as a function of temperature, we found a reduction of approximately 8% in the maximum electric field lead to a nearly 72% decrease in the DCR at Vex = 5 V and T = 25 ℃. Also, the activation energy increased from 0.43 eV to 0.50 eV, as decreasing the maximum electric field. Finally, we discuss the importance of electric field engineering in reducing the field-enhanced mechanisms contributing to the DCR in SPADs and the benefits on the SPADs related to different types of radiation detection applications.

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참고문헌 (39)

D. Renker, E. Lorenz, Advances in solid state photon detectors, J. Instrum. 4 (2009) P04004.
F. Acerbi, A. Ferri, A. Gola, M. Cazzanelli, L. Pavesi, N. Zorzi, C. Piemonte, Characterization of single-photon time resolution: from single SPAD to silicon photomultiplier, IEEE Trans. Nucl. Sci. 61 (2014) 2678-2686.

상세보기
F. Acerbi, G. Paternoster, A. Gola, N. Zorzi, C. Piemonte, Silicon photo-multipliers and single-photon avalanche diodes with enhanced NIR detection efficiency at FBK, Nucl. Instrum. Methods Phys. Res. 912 (2018) 309-314.

상세보기
P. Buzhan, A. Karakash, Y. Teverovskiy, Silicon Photomultiplier and CsI(Tl) scintillator in application to portable H * (10) dosimeter, Nucl. Instrum. Methods Phys. Res. 912 (2018) 245-247.

상세보기
G. Erika, Silicon photomultipliers for high energy physics detectors, J. Instrum. 6 (2011) C10003.

상세보기
S. Gundacker, F. Acerbi, E. Auffray, A. Ferri, A. Gola, M.V. Nemallapudi, G. Paternoster, C. Piemonte, P. Lecoq, State of the art timing in TOF-PET detectors with LuAG, GAGG and L(Y)SO scintillators of various sizes coupled to FBK-SiPMs, J. Instrum. 11 (2016) P08008. P08008.

상세보기
R. Agishev, A. Comeron, J. Bach, A. Rodriguez, M. Sicard, J. Riu, S. Royo, Lidar with SiPM: some capabilities and limitations in real environment, Optic Laser. Technol. 49 (2013) 86-90.

상세보기
G. Ambrosi, M. Ambrosio, C. Aramo, E. Bissaldi, A. Boiano, A. Bonavolonta, C. de Lisio, L. Di Venere, E. Fiandrini, N. Giglietto, F. Giordano, M. Ionica, V. Masone, R. Paoletti, V. Postolache, D. Simone, V. Vagelli, M. Valentino, Development of a SiPM based camera for Cherenkov telescope array, Nucl. Part.Phys. Proc. 291-293 (2017) 55-58.

상세보기
C. Barker, T. Zhu, L. Rolison, S. Kiff, K. Jordan, A. Enqvist, Pulse shape analysis and discrimination for silicon-photomultipliers in helium-4 gas scintillation neutron detector, EPJ Web Conf. 170 (2018), 07002.
D.J. Herbert, V. Saveliev, N. Belcari, N.D. Ascenzo, A.D. Guerra, A. Golovin, First results of scintillator readout with silicon photomultiplier, IEEE Trans. Nucl. Sci. 53 (2006) 389-394.

상세보기
M. Stipcevic, D. Wang, R. Ursin, Characterization of a commercially available large area, high detection efficiency single-photon avalanche diode, J. Lightwave Technol. 31 (2013) 3591-3596.

상세보기
G. Collazuol, M.G. Bisogni, S. Marcatili, C. Piemonte, A. Del Guerra, Studies of silicon photomultipliers at cryogenic temperatures, Nucl. Instrum. Methods Phys. Res. 628 (2011) 389-392.

상세보기
R. Pagano, G. Valvo, D. Sanfilippo, S. Libertino, D. Corso, P.G. Fallica, S. Lombardo, Silicon photomultiplier device architecture with dark current improved to the ultimate physical limit, Appl. Phys. Lett. 102 (2013) 183502.

상세보기
S.M. Sze, K. Ng, Physics of Semiconductor Devices, third ed., John Wiley & Sons, 2007.
R.H. Haitz, Mechanisms contributing to the noise pulse rate of avalanche diodes, J. Appl. Phys. 36 (1965) 3123-3131.

상세보기
P.A. Martin, B. Streetman, K. Hess, Electric field enhanced emission from non-Coulombic traps in semiconductors, J. Appl. Phys. 52 (1981) 7409-7415.

상세보기
R. McIntyre, Multiplication noise in uniform avalanche diodes, IEEE Trans. Electron. Dev. 13 (1966) 164-168.

상세보기
R. Pagano, S. Libertino, D. Corso, S. Lombardo, G. Valvo, D. Sanfilippo, G. Condorelli, M. Mazzillo, A. Piana, B. Carbone, Silicon photomultiplier: technology improvement and performance, J. Sys. Mea. 6 (2013) 124-136.
R. Pagano, S. Libertino, D. Corso, S. Lombardo, G. Valvo, D. Sanfilippo, G. Condorelli, M. Mazzillo, A. Piana, B. Carbone, G. Fallica, Improvement of the diffusive component of dark current in SiPM pixels, Sensordevices (2012) 2012.
S. Cova, A. Lacaita, G. Ripamonti, Trapping phenomena in avalanche photo-diodes on nanosecond scale, IEEE Electron. Device Lett. 12 (1991) 685-687.

상세보기
G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers, A new recombination model for device simulation including tunneling, IEEE Trans. Electron. Dev. 39 (1992) 331-338.

상세보기
W.J. Kindt, H.W.V. Zeijl, Modelling and fabrication of Geiger mode avalanche photodiodes, IEEE Trans. Nucl. Sci. 45 (1998) 715-719.

상세보기
K.T. Lim, H. Kim, M. Kim, Y. Kim, C. Lee, G. Cho, Photon-number resolving capability in SiPMs with electric field variation for radiation detection applications, Radiat. Phys. Chem. 155 (2019) 101-106.

상세보기
C. Piemonte, R. Battiston, M. Boscardin, G.F.D. Betta, A.D. Guerra, N. Dinu, A. Pozza, N. Zorzi, Characterization of the first prototypes of silicon photo-multiplier fabricated at ITC-irst, IEEE Trans. Nucl. Sci. 54 (2007) 236-244.

상세보기
F. Acerbi, S. Gundacker, Understanding and simulating SiPMs, Nucl. Instrum. Methods Phys. Res. 926 (2019) 16-35.

상세보기
V. Chmill, E. Garutti, R. Klanner, M. Nitschke, J. Schwandt, Study of the breakdown voltage of SiPMs, Nucl. Instrum. Methods Phys. Res. 845 (2017) 56-59.

상세보기
C.Y. Chang, S.S. Chiu, L.P. Hsu, Temperature dependence of breakdown voltage in silicon abrupt p-n junctions, IEEE Trans. Electron. Dev. 18 (1971) 391-393.

상세보기
N. Serra, G. Giacomini, A. Piazza, C. Piemonte, A. Tarolli, N. Zorzi, Experimental and TCAD study of breakdown voltage temperature behavior in n+/p SiPMs, IEEE Trans. Nucl. Sci. 58 (2011) 1233-1240.

상세보기
X. Li, C. Lockhart, T.K. Lewellen, R.S. Miyaoka, Study of PET detector performance with varying SiPM parameters and readout schemes, IEEE Trans. Nucl. Sci. 58 (2011) 590-596.

상세보기
C. Piemonte, A. Gola, Overview on the main parameters and technology of modern Silicon Photomultipliers, Nucl. Instrum. Methods Phys. Res. 926 (2019) 2-15.

상세보기
M. Ghioni, A. Gulinatti, I. Rech, F. Zappa, S. Cova, Progress in silicon single-photon avalanche diodes, IEEE J. Sel. Top. Quant. Electron. 13 (2007) 852-862.

상세보기
M. Ghioni, A. Gulinatti, I. Rech, P. Maccagnani, S. Cova, Large-area Low-Jitter Silicon Single Photon Avalanche Diodes, SPIE, 2008.
G.A.M. Hurkx, H.C.d. Graaff, W.J. Kloosterman, M.P.G. Knuvers, A new analytical diode model including tunneling and avalanche breakdown, IEEE Trans. Electron. Dev. 39 (1992) 2090-2098.

상세보기
A.N. Otte, T. Nguyen, J. Stansbury, Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability, Nucl. Instrum. Methods Phys. Res. 916 (2019) 283-289.

상세보기
A. Gola, F. Acerbi, M. Capasso, M. Marcante, A. Mazzi, G. Paternoster, C. Piemonte, V. Regazzoni, N. Zorzi, NUV-sensitive silicon photomultiplier technologies developed at fondazione bruno kessler, Sensors 19 (2019) 308.

상세보기
A.N. Otte, D. Garcia, T. Nguyen, D. Purushotham, Characterization of three high efficiency and blue sensitive silicon photomultipliers, Nucl. Instrum. Methods Phys. Res. 846 (2017) 106-125.

상세보기
G. Zappal a, F. Acerbi, A. Ferri, A. Gola, G. Paternoster, V. Regazzoni, N. Zorzi, C. Piemonte, Study of the photo-detection efficiency of FBK High-Density silicon photomultipliers, J. Instrum. 11 (2016) P11010.

상세보기
C. Piemonte, F. Acerbi, A. Ferri, A. Gola, G. Paternoster, V. Regazzoni, G. Zappala, N. Zorzi, Performance of NUV-HD silicon photomultiplier technology, IEEE Trans. Electron. Dev. 63 (2016) 1111-1116.

상세보기
I. Ostrovskiy, F. Retiere, D. Auty, J. Dalmasson, T. Didberidze, R. DeVoe, G. Gratta, L. Huth, L. James, L. Lupin-Jimenez, N. Ohmart, A. Piepke, Characterization of silicon photomultipliers for nEXO, IEEE Trans. Nucl. Sci. 62 (2015) 1825-1836.

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DOI : 10.1016/j.net.2020.07.006 [무료]
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