[논문]Pulsed DC 마그네트론 스퍼터링으로 제조한 소다라임 유리의 고투과 및 대전방지 박막특성 연구

정종국; 임실묵

doi:10.5695/jsse.2022.55.6.353

Pulsed DC 마그네트론 스퍼터링으로 제조한 소다라임 유리의 고투과 및 대전방지 박막특성 연구
A study on the high transparent and antistatic thin films on sodalime glass by reactive pulsed DC magnetron sputtering 원문보기

한국표면공학회지 = Journal of the Korean institute of surface engineering, v.55 no.6, 2022년, pp.353 - 362

정종국 (한국공학대학교 신소재공학과) , 임실묵 (한국공학대학교 신소재공학과)

Abstract ▼ AI-Helper

Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb2O5, | SiO2 structure and antistatic films of ITO designed on 100 × 100 × 3 mmt sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 𝛺/☐ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb2O5 64 nm | SiO2 41 nm | sodalime glass | ITO 10 nm | Nb2O5 64 nm | SiO2 41 nm.

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표/그림 (13)

그림 Fig. 1. Schematic diagram of quartz glass(a) and soda lime glass(b) for photomask.
표 Table 1. Experimental conditions of pulsed DC magnetron sputtering process.
그림 Fig. 2. Optical properties of multilayer thin films predicted by Macleod simulator. (a) single side antireflection, (b) double side antireflection, (c) double side antireflection including antistatic.
표 Table 2. Reliability test conditions of sodalime glass including antireflection and antistatic coating.
$Fig. 3. Properties of SiO2 for low refractive index film. (a) XPS wide scan spectra of O1s, (b) XPS narrow scan spectra of Si2p, (c) refractive index for O2 flow change, (d) refractive index for film thickness change.$ 그림 Fig. 3. Properties of SiO₂ for low refractive index film. (a) XPS wide scan spectra of O1s, (b) XPS narrow scan spectra of Si2p, (c) refractive index for O₂ flow change, (d) refractive index for film thickness change.
$Fig. 4. FIB/FE-SEM surface morphology and AFM image of low refractive index SiO2 films deposited at various process pressure. (a) 2.5mTorr, (b) 3.0mTorr, (c) 3.5mTorr.$ 그림 Fig. 4. FIB/FE-SEM surface morphology and AFM image of low refractive index SiO₂ films deposited at various process pressure. (a) 2.5mTorr, (b) 3.0mTorr, (c) 3.5mTorr.
$Fig. 5. Properties of Nb2O5 for high refractive index film. (a) XPS wide scan spectra of O1s, (b) XPS narrow scan spectra of Nb3d3 and Nb3d5, (c) refractive index for O2 flow change, (d) refractive index for film thickness change.$ 그림 Fig. 5. Properties of Nb₂O₅ for high refractive index film. (a) XPS wide scan spectra of O1s, (b) XPS narrow scan spectra of Nb3d3 and Nb3d5, (c) refractive index for O₂ flow change, (d) refractive index for film thickness change.
$Fig. 6. FIB/FE-SEM surface morphology and AFM image of high refractive index Nb2O5 films deposited at various process pressure. (a) 2.5mTorr, (b) 3.0mTorr, (c) 3.5mTorr.$ 그림 Fig. 6. FIB/FE-SEM surface morphology and AFM image of high refractive index Nb₂O₅ films deposited at various process pressure. (a) 2.5mTorr, (b) 3.0mTorr, (c) 3.5mTorr.
$Fig. 7. Properties of ITO thin films by O2 flow change. (a) XPS analysis of atomic (In3d, Sn3d and O1s) concentrations, (b) electrical properties, (c) refractive index.$ 그림 Fig. 7. Properties of ITO thin films by O₂ flow change. (a) XPS analysis of atomic (In3d, Sn3d and O1s) concentrations, (b) electrical properties, (c) refractive index.
그림 Fig. 8. FIB/FE-SEM surface morphology and AFM image of ITO films deposited at various process pressure. (a) 2.5mTorr, (b) 3.0mTorr, (c) 3.5mTorr.
그림 Fig. 9. Cross sectional FIB/FE-SEM image(a) for multilayer thin films sputtered and transmittance spectra(b) for three different structures.
그림 Fig. 10. Transmittance changes before and after reliability test for double side antireflection structure(a) and double side antireflection structure including antistatic layer(b), and rubbing test(c) for two different structures.
표 Table 3. Comparison between theoretical thickness calculated by simulation and experimental results measured by FIB/FE-SEM.

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