[논문]Ag 중간층 두께에 따른 ZnO 박막의 광학적, 전기적 특성 연구

김현진; 장진규; 최재욱; 이연학; 허성보; 공영민; 김대일

doi:10.5695/jsse.2022.55.2.91

[국내논문] Ag 중간층 두께에 따른 ZnO 박막의 광학적, 전기적 특성 연구
Effect of Ag interlayer on the optical and electrical properties of ZnO thin films 원문보기

한국표면공학회지 = Journal of the Korean institute of surface engineering, v.55 no.2, 2022년, pp.91 - 95

김현진 (울산대학교 첨단소재공학부) , 장진규 (울산대학교 첨단소재공학부) , 최재욱 (울산대학교 첨단소재공학부) , 이연학 (울산대학교 첨단소재공학부) , 허성보 (한국생산기술연구원 동남본부 첨단하이브리드생산기술센터) , 공영민 (울산대학교 첨단소재공학부) , 김대일 (울산대학교 첨단소재공학부)

Abstract ▼ AI-Helper

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×1021 cm-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10-3 Ω-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.

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표/그림 (8)

$Fig. 1. XRD diffraction patterns for ZnO and ZnO/Ag/ZnO films deposited on glass substrate at various film thickness. (a) ZnO 60 nm, (b) ZnO 30/Ag 5/ZnO 30 nm, (c) ZnO 30/Ag 10/ZnO 30 nm, (d) ZnO 30/Ag 15/ZnO 30 nm, (e) ZnO 30/Ag 20/ZnO 30 nm.$ 그림 Fig. 1. XRD diffraction patterns for ZnO and ZnO/Ag/ZnO films deposited on glass substrate at various film thickness. (a) ZnO 60 nm, (b) ZnO 30/Ag 5/ZnO 30 nm, (c) ZnO 30/Ag 10/ZnO 30 nm, (d) ZnO 30/Ag 15/ZnO 30 nm, (e) ZnO 30/Ag 20/ZnO 30 nm.
표 Table. 1. Experimental condition of ZnO and ZnO/Ag/ZnO thin film deposition.
표 Table. 2. Grain size of ZnO (002) and Ag (111) films.
그림 Fig. 2. AFM images and surface roughness of ZnO and ZnO/Ag/ZnO films. (a) ZnO 60 nm; 1.28 nm, (b) ZnO 30/ Ag 5/ ZnO 30 nm; 1.89 nm, (c) ZnO 30/Ag 10/ZnO 30 nm; 1.65 nm, (d) ZnO 30/Ag 15/ZnO 30 nm; 1.70 nm, (e) ZnO 30/Ag 20/ZnO 30 nm; 1.79 nm.
그림 Fig. 3. Effect of the Ag interlayer thickness on optical transmittance of ZnO and ZnO/Ag/ZnO films. (a) ZnO 60 nm, (b) ZnO 30/Ag 5/ZnO 30 nm, (c) ZnO 30/ Ag 10/ ZnO 30 nm, (d) ZnO 30/Ag 15/ZnO 30 nm, (e) ZnO 30/ Ag 20/ZnO 30 nm.
표 Table. 3. The electrical properties of ZnO and ZnO/Ag/ZnO thin films.
그림 Fig. 4. Dependence of the optical band gap of the films on Ag interlayer thickness. (a) ZnO 60 nm; 4.13 eV, (b) ZnO 30/Ag 5/ZnO 30 nm; 4.15 eV, (c) ZnO 30/ Ag 10/ ZnO 30 nm; 4.19 eV, (d) ZnO 30/Ag 15/ZnO 30 nm; 4.21 eV, (e) ZnO 30/Ag 20/ZnO 30 nm; 4.22 eV.
표 Table. 4. The figure of merit(FOM) of ZnO and ZnO/Ag/ZnO thin films.

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