최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.35 no.6, 2022년, pp.626 - 630
신윤지 (한국세라믹기술원 반도체소재센터) , 조성호 (한국세라믹기술원 반도체소재센터) , 정운현 (한국세라믹기술원 반도체소재센터) , 정성민 (한국세라믹기술원 반도체소재센터) , 이원재 (동의대학교 신소재공학과) , 배시영 (한국세라믹기술원 반도체소재센터)
A 100 mm × 50 mm-sized (100) gallium oxide (Ga2O3) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga2O3 ingot were compatible with a commercial Ga2O3 substrate by showing strong (100) orientation behaviors ...
S. J. Pearton, J. Yang, P. H. Cary, F. Ren, J. Kim, M. J. Tadjer, and M. A. Mastro, Appl. Phys. Rev., 5, 011301 (2018). [DOI: https://doi.org/10.1063/1.5006941]
M. H. Wong, K. Goto, H. Murakami, Y. Kumagai, and M. Higashiwaki, IEEE Electron Device Lett., 40, 431 (2019). [DOI: https://doi.org/10.1109/LED.2018.2884542]
M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 103, 123511 (2013). [DOI: https://doi.org/10.1063/1.4821858]
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 100, 013504 (2012). [DOI: https://doi.org/10.1063/1.3674287]
A. Kuramata, K. Koshi, S. Watanabe, Y. Yamaoka, T. Masui, and S. Yamakoshi, Jpn. J. Appl. Phys., 55, 1202A2 (2016). [DOI: http://doi.org/10.7567/JJAP.55.1202A2].
K. Hoshikawa, T. Kobayashi, Y. Matsuki, E. Ohba, and T. Kobayashi, J. Cryst. Growth, 545, 125724 (2020). [DOI: https://doi.org/10.1016/j.jcrysgro.2020.125724]
K. Hoshikawa, E. Ohba, T. Kobayashi, J. Yanagisawa, C. Miyagawa, and Y. Nakamura, J. Cryst. Growth, 447, 36 (2016). [DOI: https://doi.org/10.1016/j.jcrysgro.2016.04.022]
H. Cui, H. F. Mohamed, C. Xia, Q. Sai, W. Zhou, H. Qi, J. Zhao, J. Si, and X. Ji, J. Alloys Compd., 788, 925 (2019). [DOI: https://doi.org/10.1016/j.jallcom.2019.02.076]
N. Suzuki, S. Ohira, M. Tanaka, T. Sugawara, K. Nakajima, and T. Shishido, Phys. Status Solidi C, 4, 2310 (2007). [DOI: https://doi.org/10.1002/pssc.200674884]
Z. Galazka, Semicond. Sci. Technol., 33, 113001 (2018). [DOI: https://doi.org/10.1088/1361-6641/aadf78]
Z. Galazka, S. Ganschow, K. Irmscher, D. Klimm, M. Albrecht, R. Schewski, M. Pietsch, T. Schulz, A. Dittmar, A. Kwasniewski, R. Grueneberg, S. B. Anooz, A. Popp, U. Juda, I. M. Hanke, T. Schroeder, and M. Bickermann, Prog. Cryst. Growth Charact. Mater., 67, 100511 (2021). [DOI: https://doi.org/10.1016/j.pcrysgrow.2020.100511]
H. F. Mohamed, C. Xia, Q. Sai, H. Cui, M. Pan, and H. Qi, J. Semicond., 40, 011801 (2019). [DOI: https://doi.org/10.1088/1674-4926/40/1/011801]
E. Ahmadi and Y. Oshima, J. Appl. Phys., 126, 160901 (2019). [DOI: https://doi.org/10.1063/1.5123213]
A. Kyrtsos, M. Matsubara, and E. Bellotti, Phys. Rev. B, 95, 245202 (2017). [DOI: https://doi.org/10.1103/PhysRevB.95.245202]
M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schoche, V. Darakchieva, E. Janzen, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, Phys. Rev. B, 93, 125209 (2016). [DOI: https://doi.org/10.1103/PhysRevB.93.125209]
K. Zhang, Z. Xu, S. Zhang, H. Wang, H. Cheng, J. Hao, J. Wu, and F. Fang, Physica B: Physics of Condensed Matter, 600, 412624 (2020). [DOI: https://doi.org/10.1016/j.physb.2020.412624]
M. Saleh, A. Bhattacharyya, J. B. Varley, S. Swain, J. Jesenovec, S. Krishnamoorthy, and K. Lynn, Appl. Phys. Express, 12, 085502 (2019). [DOI: https://doi.org/10.7567/ 1882-0786/ab2b6c]
Y. Usui, T. Oya, G. Okada, N. Kawaguchi, T. Yanagida, Mater. Res. Bull., 90, 266 (2017). [DOI: https://doi.org/10.1016/j.materresbull.2017.02.016]
S. Zhang, X. Lian, Y. Ma, W. Liu, Y. Zhang, Y. Xu, and H. Cheng, J. Semicond., 39, 083003 (2018). [DOI: https://doi.org/10.1088/1674-4926/39/8/083003]
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
오픈액세스 학술지에 출판된 논문
※ AI-Helper는 부적절한 답변을 할 수 있습니다.