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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.27 no.2, 2023년, pp.172 - 179
김기철 (Space Technology Center, Advanced Defense Science & Technology Research Institute (ADSTRI), Agency for Defense Development (ADD)) , 김병재 (Space Technology Center, Advanced Defense Science & Technology Research Institute (ADSTRI), Agency for Defense Development (ADD)) , 박경열 (Space Technology Center, Advanced Defense Science & Technology Research Institute (ADSTRI), Agency for Defense Development (ADD))
This paper presents the optimal structure for enhancing the noise figure of a low noise amplifier(LNA) in situations where transmitted signals leak into the receiving parts. For improving performance of an LNA, a novel composite structure which incorporates the smaller transistors is newly proposed....
H. Al-Rubaye, and G. M. Rebeiz, "W-Band?direct-modulation >20-Gb/s transmit and receive?building blocks in 32-nm SOI CMOS," IEEE?Journal of Solid-State Circuits (JSSC), vol.52,?no.9, pp.2277-2291, 2017.?DOI: 10.1109/JSSC.2017.2723504
M. Inomata, W. Yamada, N. Kuno, M. Sasaki,?M. Nakamura, H. Ishikawa, and Y. Oda, "Terahertz?propagation characteristics for 6G mobile?communication systems," 2021 15th European?Conference on Antennas and Propagation (EuCAP),?pp.1-5, 2021.
M. Sabzi, M. Kamarei, T. Razban, Y. Mahe,?"Parallel Amplifiers Technique for LNA Design,"?5th Sino-French Workshop on Information and?Communication Technologies (SIFWICT), 2019.
E. Byk, A. M. Couturier, M. Camiade, C.?Teyssandier, M. Hosch, H. Stieglauer, and P.?Fellon, "An E-band very low noise amplifier with?variable gain control on 100nm GaAs pHEMT?technology," 2012 7th European Mircowave Integrated?Circuits Conference (EuMIC), pp.111-114, 2012.
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