[논문]광조사에 의한 실리콘 태양전지 열화 연구

심명섭; 최동진; 우명지; 손지우; 최영호; 김동환

doi:10.21218/cpr.2024.12.1.006

광조사에 의한 실리콘 태양전지 열화 연구
Study of Light-induced Effect on Silicon Solar Cell from Wafer to Cell: A Review 원문보기

Current photovoltaic research = 한국태양광발전학회논문지, v.12 no.1, 2024년, pp.6 - 16

심명섭 (신소재공학과, 고려대학교) , 최동진 (에너지기술공동연구소, 고려대학교) , 우명지 (신소재공학과, 고려대학교) , 손지우 (신소재공학과, 고려대학교) , 최영호 (에너지기술공동연구소, 고려대학교) , 김동환 (신소재공학과, 고려대학교)

Abstract ▼ AI-Helper

The efficiency of silicon solar cells is approaching a theoretical limit referred to as 'the state of the art'. Consequently, maintaining efficiency is more productive than pursuing improvements the last room for limiting efficiency. One of the primary considerations in silicon module conservation is the occurrence of failures and degradation. Degradation can be mitigated during the cell manufacturing stage, unlike physical and spontaneous failure. It is mostly because the chemical reaction is triggered by the carrier generation of thermal and light injection, an inherent aspect of the solar cell environment. Therefore, numerous researchers and cell manufacturers are engaged in implementing mitigation strategies based on the physical degradation mechanism.

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표/그림 (5)

그림 Fig. 1. (a) Crystalline silicon solar cell and HIT solar cell efficiency chart, from NREL³⁾, (b) A program called VOS viewer for web papers searched for 'silicon' and 'light soaking' on the Web of Science. The most frequently occurring words and relationships between words are listed with lines, and the relationships are expressed by color.
그림 Fig. 2. (a) Changes in amorphous silicon thin film conductivity due to light irradiation (SWE)⁴⁾, copyright 1977, American Institute of Physics. (b) Light-induced spin density characteristics by heat treatment⁵⁾, copyright 1981, Applied Physics Letters. (c,d) Observation of reversible SWE and changes in microstructure¹¹⁾, copyright 2014, Applied Physics Letters
그림 Fig. 3. (a) Solar cell Vocchange due to light intensity¹²⁾, copyright 2003, Journal of Applied Physics (b) Minority carrier lifetime change according to light intensity of p-type wafers with different resistivity²⁹⁾, copyright 1999, Journal of Applied Physics (c) Minority carrier lifetime change due to interstitial oxygen concentration and light intensity²¹⁾, copyright 2005, Progress in Photovoltaics: Research and Application (d) Reversible light induced degradation reaction and regeneration by heat treatment³²⁾, copyright 2011, Energy Procedia (e,f) Activation energy required for light induced degradation and regeneration²⁰⁾, copyright 2004, Ameriacan Physical Society (g) Calculation of reaction rate of light induced degradation cycle process⁶⁰⁾, copyright 2014, Applied Physics Letters
그림 Fig. 4. (a) Efficiency change by DA and PL image according to temperature³⁶⁾, copyright 2017, John Wiley and Sons (b) Degradation by passivation film and heat treatment process⁴⁴⁾,Open access (c) Minority carrier lifetime change with respect to wafer thickness⁵¹⁾, copyright 2017, John Wiley and Sons (d) Effect of temperature heated by light intensity on cells (e) LeTID tendency according to temperature(f) LeTID tendency according to light intensity
그림 Fig. 5. (a) Efficiency (Deg, %rel) and degree of degradation of minority carrier life (NDD, /S) in papers. (b) Hydrogen diffusion length and each process according to each temperature (c) Carrier injection effect in solar cells.

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