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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.28 no.1, 2024년, pp.33 - 37
임병옥 (R&D Division, Electronic Device Solution Inc.) , 고주석 (R&D Division, Electronic Device Solution Inc.) , 김성찬 (Department of Electronic Engineering, Hanbat National University)
In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves s...
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