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NTIS 바로가기Microelectronics journal, v.28 no.4, 1997년, pp.509 - 517
Camon, H. (Laboratoire d'Architecture et d'Analyse des Systè) , Moktadir, Z. (mes du CNRS, 7 avenue du colonel Roche, F-31077 Toulouse Cedex, France)
AbstractAnisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram ...
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