최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Journal of the Electrochemical Society : JES, v.144 no.9, 1997년, pp.L248 - L250
Hsu, Wei‐Yung (Texas Instruments, Semiconductor Process and Device Center, Dallas, Texas 75243) , Hong, Qi‐Zhong (Texas Instruments, Semiconductor Process and Device Center, Dallas, Texas 75243) , Liu, Hung‐Yu (Texas Instruments, Materials Science Laboratory, Dallas, Texas 75243) , Douglas, Monte (Texas Instruments, Materials Science Laboratory, Dallas, Texas 75243) , Taylor, Kelly (Texas Instruments, Materials Science Laboratory, Dallas, Texas 75243) , Magel, Lissa K. (Texas Instruments, Materials Science Laboratory, Dallas, Texas 75243) , Luttmer, J. D. (Texas Instruments, Semiconductor Process and Device Center, Dallas, Texas 75243) , Havemann, R. H. (Texas Instruments, Semiconductor Process and Device Center, Dallas, Texas 75243)
The effects of Ar sputter etch and Ti deposition temperature on the crystalline orientation of Ti films deposited by long-throw sputtering geometry are reported. Both Ar sputter etch and high Ti deposition temperature degraded the Ti microstructure from highly (002) Ti textured to mixed (002) Ti and (011) Ti. This degradation produced a wide distribution in the crystalline orientation of Al grains in the Al/TiN/Ti stack. A mechanism based on the effects of Ar sputter etch on the oxide surface roughness and surface chemistry was proposed to explain the effect of Ar etch on the crystalline texture of Ti and Al in the Al/TiN/Ti stack.(Author abstract)
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.