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NTIS 바로가기Journal of vacuum science & technology. A, Vacuum, surfaces, and films, v.18 no.6, 2000년, pp.2791 - 2798
Cho, Byeong-Ok (School of Chemical Engineering and Institute of Chemical Processes, Seoul National University, Shillim-dong San 56-1, Kwanak-ku, Seoul 151-742, Korea) , Hwang, Sung-Wook (School of Chemical Engineering and Institute of Chemical Processes, Seoul National University, Shillim-dong San 56-1, Kwanak-ku, Seoul 151-742, Korea) , Lee, Gyeo-Re (School of Chemical Engineering and Institute of Chemical Processes, Seoul National University, Shillim-dong San 56-1, Kwanak-ku, Seoul 151-742, Korea) , Moon, Sang Heup (School of Chemical Engineering and Institute of Chemical Processes, Seoul National University, Shillim-dong San 56-1, Kwanak-ku, Seoul 151-742, Korea)
SiO 2 etch rates in a CF4 plasma were obtained at various surface angles using a Faraday cage with pinholes on the upper plane through which ions are incident on the substrate fixed at various angles inside the cage. The reactive ion etching experiments were performed at 5 mTorr in a wide bias-volta...
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