[해외논문]Electrical, optical, and structural characteristics of ITO thin films by krypton and oxygen dual ion-beam assisted evaporation at room temperature
AbstractTransparent conducting tin-doped indium oxide (ITO) thin films on polycarbonate and glass substrates were deposited without substrate heating and post-deposition annealing using a dual ion-beam assisted evaporation technique, where the bombardment of the growing film surfaces during electron...
AbstractTransparent conducting tin-doped indium oxide (ITO) thin films on polycarbonate and glass substrates were deposited without substrate heating and post-deposition annealing using a dual ion-beam assisted evaporation technique, where the bombardment of the growing film surfaces during electron beam evaporation was done using krypton (varied ion flux, JKr+, and grid acceleration voltage, Va, of the krypton ion source) and oxygen (fixed ion flux and grid acceleration voltage of the oxygen ion source) ion beams. The electrical, optical, and structural effects of krypton ion-beam bombardment of the growing ITO thin films were investigated using Hall-effect measurements, X-ray photoelectron spectroscopy (XPS), UV-visible spectrometry, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The total film thickness and the deposition rate were 100 nm and 0.06 nm/s, respectively. All ITO films grown with JKr+=1.92–3.76×1014 cm−2 s−1 and Va=100–500 V showed an amorphous structure and no other crystalline phases. As JKr+ increased, the electrical conductivity and the optical transmittance of the grown films were improved compared with those of the ITO films deposited using the oxygen ion-beam only. Also, an increase of the bombardment energy by increasing Va of the krypton ion source caused the deterioration of ITO film properties. The conductivity and the optical transmittance of ITO films deposited on polycarbonate substrates were a little lower than those of films on glass substrates. At room-temperature, using optimal growth conditions, the electrical resistivity was as low as 6.4×10−4 Ω cm with an electron carrier concentration ne=4.3×1020 cm−3 and a Hall mobility μH=26.7 cm2 V−1 s−1, the visible transmittance (at λ=550 nm) was 90%, and optical direct band gap energy 3.8 eV.
AbstractTransparent conducting tin-doped indium oxide (ITO) thin films on polycarbonate and glass substrates were deposited without substrate heating and post-deposition annealing using a dual ion-beam assisted evaporation technique, where the bombardment of the growing film surfaces during electron beam evaporation was done using krypton (varied ion flux, JKr+, and grid acceleration voltage, Va, of the krypton ion source) and oxygen (fixed ion flux and grid acceleration voltage of the oxygen ion source) ion beams. The electrical, optical, and structural effects of krypton ion-beam bombardment of the growing ITO thin films were investigated using Hall-effect measurements, X-ray photoelectron spectroscopy (XPS), UV-visible spectrometry, X-ray diffraction (XRD), and scanning electron microscopy (SEM). The total film thickness and the deposition rate were 100 nm and 0.06 nm/s, respectively. All ITO films grown with JKr+=1.92–3.76×1014 cm−2 s−1 and Va=100–500 V showed an amorphous structure and no other crystalline phases. As JKr+ increased, the electrical conductivity and the optical transmittance of the grown films were improved compared with those of the ITO films deposited using the oxygen ion-beam only. Also, an increase of the bombardment energy by increasing Va of the krypton ion source caused the deterioration of ITO film properties. The conductivity and the optical transmittance of ITO films deposited on polycarbonate substrates were a little lower than those of films on glass substrates. At room-temperature, using optimal growth conditions, the electrical resistivity was as low as 6.4×10−4 Ω cm with an electron carrier concentration ne=4.3×1020 cm−3 and a Hall mobility μH=26.7 cm2 V−1 s−1, the visible transmittance (at λ=550 nm) was 90%, and optical direct band gap energy 3.8 eV.
AI-Helper
※ AI-Helper는 부적절한 답변을 할 수 있습니다.