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NTIS 바로가기Solid-state electronics, v.44 no.10, 2000년, pp.1853 - 1856
Chen, C.L (Corresponding author. Tel.: +1-781-981-4507) , Mathews, R.H (fax: +1-781-981-7889) , Mahoney, L.J (Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02420-9108, USA) , Calawa, S.D (Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02420-9108, USA) , Sage, J.P (Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02420-9108, USA) , Molvar, K.M (Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02420-9108, USA) , Parker, C.D (Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02420-9108, USA) , Maki, P.A (Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02420-9108, USA) , Sollner, T.C.L.G (Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02420-9108, USA)
AbstractMonolithic resonant-tunneling-diode (RTD) relaxation oscillators are fabricated. The highest repetition rate of this pulse generator is 6.7 GHz with a pulse width of approximately 60 ps. Oscillators with an RTD connected to an off-chip transmission line have been operated at a rate as low as...
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Appl Phys Lett Verghese 72 2550 1998 10.1063/1.121414 Phase noise of a resonant-tunneling relaxation oscillator
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