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NTIS 바로가기Solid-state electronics, v.44 no.10, 2000년, pp.1753 - 1764
Ng, R. (Corresponding author. Tel.: +44-1223-332766) , Udrea, F. (fax: +44-1223-332662) , Amaratunga, G. (Department of Engineering, Cambridge University, Cambridge CB2 1PZ, UK)
AbstractThis paper presents an analytical model for the determination of the basic breakdown properties of three-dimensional (3D)-RESURF/CoolMOS/super junction type structures. To account for the two-dimensional (2D) effect of the 3D-RESURF action, 2D models of the electric field distribution are de...
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