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NTIS 바로가기Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, v.173 no.3, 2001년, pp.319 - 325
Kyutt, R.N (Ioffe Physicotechnical Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia) , Sobolev, Nikolai A (Ioffe Physicotechnical Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia) , Nikolaev, Yu.A (Ioffe Physicotechnical Institute, Polytechnicheskaya 26, St. Petersburg 194021, Russia) , Vdovin, V.I (Institute for Chemical Problems of Microelectronics, Moscow 109017, Russia)
AbstractErbium-doped layers have been produced on 〈111〉-oriented silicon wafers using high-energy amorphizing Er implants and solid phase epitaxy (SPE). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques, used to study the microstructure of these layers, reve...
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