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Journal of crystal growth, v.220 no.4, 2000년, pp.548 - 553
Wang, Shanzhong (Applied Physics Department, Laboratory for Optoelectronic Materials and Optoelectronic Devices, Shanghai Jiao Tong University, Shanghai 200030, People's Republic of China) , Xie, Shengwu (Applied Physics Department, Laboratory for Optoelectronic Materials and Optoelectronic Devices, Shanghai Jiao Tong University, Shanghai 200030, People's Republic of China) , Pang, Qianjun (Applied Physics Department, Laboratory for Optoelectronic Materials and Optoelectronic Devices, Shanghai Jiao Tong University, Shanghai 200030, People's Republic of China) , Zheng, Hang (Applied Physics Department, Laboratory for Optoelectronic Materials and Optoelectronic Devices, Shanghai Jiao Tong University, Shanghai 200030, People's Republic of China) , Xia, Yuxing (Applied Physics Department, Laboratory for Optoelectronic Materials and Optoelectronic Devices, Shanghai Jiao Tong University, Shanghai 200030, People's Republic of China) , Ji, Rongbin (Research Center for Advanced Materials and National Laboratory for Infrared Physics, Shanghai Institute of Technological Physics, Chine) , Wu, Yan , He, Li , Zhu, Zuoming , Li, Guohua , Wang, Zhaoping
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AbstractWe report on a detailed investigation on the temperature-dependent behavior of photoluminescence from molecular beam epitaxy (MBE)-grown chlorine-doped ZnSe epilayers. The overwhelming neutral donor bound exciton (Cl0X) emission at 2.797eV near the band edge with a full-width at half-maximum...
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