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NTIS 바로가기Journal of crystal growth, v.220 no.4, 2000년, pp.494 - 500
Park, Gyeong-Su (Analytical Engineering Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, South Korea) , Choi, Won-Bong (Display Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, South Korea) , Kim, Jong-Min (Display Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, South Korea) , Choi, Young Chul (Department of Semiconductor Science and Technology, and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561-756, South Korea) , Lee, Young Hee (Department of Semiconductor Science and Technology, and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561-756, South Korea) , Lim, Chang-Bin (Analytical Engineering Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, South Korea)
AbstractGallium oxide nanowires were synthesized by electric arc discharge of GaN powders mixed with a small amount of Ni and Co. The crystal structure of nanowires was determined by multi-channel X-ray diffractometry (MC-XRD), FT-Raman spectroscopy and transmission electron microscopy (TEM). The an...
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