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NTIS 바로가기IEEE journal of quantum electronics, v.36 no.11, 2000년, pp.1293 - 1298
Morrison, A.P. (Dept. of Electr.&Electron. Eng., Univ. Coll. Cork, Ireland) , Lambkin, J.D. , van der Poel, C.J. , Valster, A.
The electron transport characteristics of five n-i-n diodes with (AlxGa1-x)0.5In0.5P intrinsic barrier regions of various aluminum composition x were determined from the measured I-V characteristics between 60 and 310 K. From these measurements, three different transport regimes were identified. Fow...
Hickmott, T. W., Solomon, P. M., Fischer, R., Morkoç, H.. Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitors. Journal of applied physics, vol.57, no.8, 2844-2853.
Arnold, D., Ketterson, A., Henderson, T., Klem, J., Morkoç, H.. Electrical characterization of GaAs/AlGaAs semiconductor-insulator-semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band-gap discontinuity. Journal of applied physics, vol.57, no.8, 2880-2885.
Int Electron Devices Meeting (IEDM) 1994 estimation of the $\gamma$ –x crossover composition in disordered (al $_{x}$ ga $_{1-x}$ ) $_{0.5}$ in $_{0.5}$ p using n-i-n diodes morrison 1997
Iga, K., Uenohara, H., Koyama, F.. Electron reflectance of multiquantum barrier (MQB). Electronics letters, vol.22, no.19, 1008-1010.
Hatakoshi, G., Itaya, K., Ishikawa, M., Okajima, M., Uematsu, Y.. Short-wavelength InGaAlP visible laser diodes. IEEE journal of quantum electronics, vol.27, no.6, 1476-1482.
Chaabane, H, Zazoui, M, Bourgoin, J C, Donchev, V. Electronic transport through semiconductor barriers. Semiconductor science and technology, vol.8, no.12, 2077-2084.
Morrison, A.P., Lambkin, J.D., van der Poel, C.J., Valster, A.. Evaluation of multiquantum barriers in bulk double heterostructure visible laser diodes. IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society, vol.8, no.7, 849-851.
Lenzlinger, M., Snow, E. H.. Fowler-Nordheim Tunneling into Thermally Grown SiO2. Journal of applied physics, vol.40, no.1, 278-283.
Lu, S. S., Lee, K., Nathan, M. I., Wright, S. L.. Resonant indirect Fowler-Nordheim tunneling in Al0.8Ga0.2As barrier. Applied physics letters, vol.58, no.3, 266-268.
Shono, M., Honda, S., Ikegami, T., Bessyo, Y., Hiroyama, R., Kase, K., Yodoshi, K., Yamaguchi, T., Niina, T.. High-power operation of 630 nm-band tensile strained multiquantum-well AlGaInP laser diodes with a multiquantum barrier. Electronics letters, vol.29, no.11, 1010-1011.
Rossmanith, M., Leo, J., von Klitzing, K.. Model of Γ to X transition in thermally activated tunnel currents across AlxGa1−xAs single barriers. Journal of applied physics, vol.69, no.6, 3641-3645.
Rennie, J., Okajima, M., Watanabe, M., Hatakoshi, G.. Room temperature CW operation of orange light (625 nm) emitting InGaAlP laser. Electronics letters, vol.28, no.21, 1950-1952.
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