다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기
Materials Research Society symposia proceedings, v.585, 1999년, pp.183 -
Vyatkin, A. F. , Egorov, V. K. , Egorov, E. V.
AI-Helper
AbstractStrain relaxation in epitaxial Si-Ge structures induced by ion beam bombardment has been studied using a He+ channeling technique. It is shown that hot ion beam bombardment (230°C, Si+ ions with energy 200 keV and fluence 6·1013 ion/cm2) of thin strained Si-Ge layers results in pa...
Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T., Lynch, R. T.. Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy. Applied physics letters, vol.44, no.1, 102-104.
Harry, M A, Curello, G, Finney, M S, Reeson, K J, Sealy, B J. Structural properties of ion beam synthesized iron - cobalt silicide. Journal of physics. D, applied physics, vol.29, no.7, 1822-1830.
In Proceeding of X All-Union Conference on the Exploration and use of Electrostatic Acceleretors 34 1992 Egorov
Backscattering Spectroscopy 232 1978 Chu
Pyrrhotites, Crystalline and magnetic structure, phase reconstructions 56 1988 Novikov
Phys. Low-Dim. Struct 1 1 1994 Avrutin
High Energy Ion Beam Analysis of Solids 266 1988 Gotz
10.1007/978-3-642-97098-6
10.1080/00018739000101491 2. Jain S.C. , Willis J.R. , Bullough R. , Advances in Physics 39, 127(1990).
Lee, N.-E., Matsuoka, M., Sardela Jr., M. R., Tian, F., Greene, J. E.. Growth, microstructure, and strain relaxation in low-temperature epitaxial Si1−xGex alloys deposited on Si(001) from hyperthermal beams. Journal of applied physics, vol.80, no.2, 812-821.
Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S., Robinson, I. K.. GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, vol.2, no.2, 436-440.
Radiation phenomena in CdS 16 1963 Starodubcev
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.