[논문]Buffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors

Gao, Min; Zhao, Zhi-Jun; Kim, Hyeonggyun; Jin, Mingliang; Li, Panpan; Kim, Taehwan; Kang, Kyungnam; Cho, Incheol; Jeong, Jun-Ho; Park, Inkyu

doi:10.1021/acsami.0c08977

[해외논문] Buffered Oxide Etchant Post-Treatment of a Silicon Nanofilm for Low-Cost and Performance-Enhanced Chemical Sensors

ACS applied materials & interfaces, v.12 no.33, 2020년, pp.37128 - 37136

Gao, Min (Department of Mechanical Engineering , Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro , Yuseong-gu, Daejeon 34141 , South Korea) , Zhao, Zhi-Jun (Nano-Convergence Mechanical System ResearchCenter , Korea Institute of Machinery and Materials , Daejeon 34113 , South Korea) , Kim, Hyeonggyun (Department of Mechanical Engineering , Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro , Yuseong-gu, Daejeon 34141 , South Korea) , Jin, Mingliang (Institute for Future , Qingdao University , Ningxia Road 308 , Qingdao 266071 , China) , Li, Panpan (Department of Materials Science and Engineering , Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro , Yuseong-gu, Daejeon 34141 , South Korea) , Kim, Taehwan (Department of Mechanical Engineering , Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro , Yuseong-gu, Daejeon 34141 , So) , Kang, Kyungnam , Cho, Incheol , Jeong, Jun-Ho , Park, Inkyu

Abstract ▼ AI-Helper

The high surface-to-volume ratio of nanostructured materials is the key factor for excellent performance when applied to chemical sensors. In order to achieve this by a facile and low-cost fabrication strategy, buffered oxide etchant (BOE) treatment of a silicon (Si)-based sensor was proposed. An n+-n--n+ Si nanofilm structure was treated with a BOE, and palladium nanoparticles (PdNPs) were coated on the n-type Si channel surface via short-time electron beam evaporation to enable a highly sensitive and selective sensing of hydrogen (H2) gas. The BOE treatment effect on lightly doped n-type Si was investigated, and the surface morphology of the etched Si was analyzed. Furthermore, the H2 sensing characterization of PdNP-decorated Si devices with various BOE treatment times was systematically evaluated at room temperature. The results revealed that the surface of n-type Si is roughened by BOE treatment, which can further enhance the H2-sensing performance of Pd-decorated Si. The elaborate study on the BOE-post-treated Si H2 sensor showed that the performance enhancement was stable. The BOE treatment strategy was also applied to the nanopatterned Si sensors, which induced a clear performance enhancement for the H2 sensing.[FIG OMISSION]

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