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Microelectronics reliability, v.41 no.2, 2001년, pp.219 - 228
Bubennikov, Alexander N (Department of Physical and Quantum Electronics, Hi-Tech Centre, Moscow Institute of Physics and Technology (State University), 9, Institutsky, MIPT, Dolgoprudny 141700, Russian Federation) , Zykov, Andrey V (Corresponding author)
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AbstractThe experimental investigations of base reverse current of integrated Si polysilicon emitter bipolar transistor and its multiplication coefficients (M−1) vs. Ucb at different IE when the device is driven at constant emitter currents are represented. Current crowding effect induced by ...
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