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NTIS 바로가기Applied physics letters, v.78 no.10, 2001년, pp.1376 - 1378
Fetzer, C. M. (University of Utah, Salt Lake City, Utah 84112) , Lee, R. T. (University of Utah, Salt Lake City, Utah 84112) , Jun, S. W. (University of Utah, Salt Lake City, Utah 84112) , Stringfellow, G. B. (University of Utah, Salt Lake City, Utah 84112) , Lee, S. M. (Kwanju Institute of Science and Technology, Kwanju 500-712, Korea) , Seong, T. Y. (Kwanju Institute of Science and Technology, Kwanju 500-712, Korea)
Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by ...
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