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Semiconductor science and technology, v.16 no.3, 2001년, pp.160 - 163
Maikap, S , Ray, S K , Banerjee, S K , Maiti, C K
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Ultra-thin (<100？？) gate quality oxynitride films have been grown on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers at low temperature using microwave NO/O2-, O2/NO- and O2/NO/O2-plasma. The change in gate voltage (ΔVG), flatband voltage (ΔVFB) and normalized current (&Del...
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