최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Nanoscale research letters, v.15 no.1, 2020년, pp.175 -
An, Jong-Ki (New Product Development Department, Wonik IPS, 75, Jinwisandan-ro, Jinwi-myeon, Pyeongtaek-si, Gyeonggi-do 17709 Republic of Korea) , Choi, Eunmi (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon, 34113 Republic of Korea) , Shim, Seob (Liquid Processing & Casting R&D Group, Korea Institute of Industrial Technology, 156, Gaetbeol-ro, Yeonsu-gu, Incheon, 21999 Republic of Korea) , Kim, Hayeong (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon, 34113 Republic of Korea) , Kang, Goru (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon, 34113 Republic of Korea) , Yun, Ju-Young (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon, 34113 Republic of Korea)
We developed a newly designed system based on in situ monitoring with Fourier transform infrared (FT-IR) spectroscopy and quadrupole mass spectrometry (QMS) for understanding decomposition mechanism and by-products of vaporized Cyclopentadienyl Tris(dimethylamino) Zirconium (CpZr(NMe2)3) during the ...
1. Saheb Z El-Masry EI Modelling of direct tunneling gate leakage current of floating-gate CMOS transistor in sub 100 nm technologies Anal Int Circ Sig Proc. 2015 84 1 67 73 10.1007/s10470-015-0553-8
2. Oluwabi AT Acik IO Katerski A Mere A Krunks M Structural and electrical characterisation of high-k ZrO2 thin films deposited by chemical spray pyrolysis method Thin Solid Films. 2018 662 129 136 10.1016/j.tsf.2018.07.035
3. Kingon AI Maria J-P Streiffer S Alternative dielectrics to silicon dioxide for memory and logic devices Nature. 2000 406 6799 1032 10.1038/35023243 10984062
4. Hong S Kim JW Lee S Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer Appl Phys Let. 2015 107 4 041117 10.1063/1.4927657
5. Clark RD Emerging applications for high k materials in VLSI technology Materials. 2014 7 4 2913 2944 10.3390/ma7042913 28788599
6. Yuan N Wang S Tan C Wang X Chen G Ding J The influence of deposition temperature on growth mode, optical and mechanical properties of ZnO films prepared by the ALD method J Crys Growth. 2013 366 43 46 10.1016/j.jcrysgro.2012.12.024
7. Brunet M Kotb HM Bouscayrol L Scheid E Andrieux M Legros C Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors Thin solid films. 2011 519 16 5638 5644 10.1016/j.tsf.2011.03.006
8. Ye G Wang H Arulkumaran S Ng GI Hofstetter R Li Y Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon Appl Phys Let. 2013 103 14 142109 10.1063/1.4824445
9. Li Y Ma L Yoo Y Wang G Zhang X Ko MJ Atomic layer deposition: A versatile method to enhance TiO2 nanoparticles interconnection of dye-sensitized solar cell at low temperature J Indust Eng Chem. 2019 73 351 356 10.1016/j.jiec.2019.02.006
10. Miikkulainen V Leskela M Ritala M Puurunen RL Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends J Appl Phys. 2013 113 2 2 10.1063/1.4757907
11. Knisley TJ Kalutarage LC Winter CH Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films Coord Chem Rev. 2013 257 23-24 3222 3231 10.1016/j.ccr.2013.03.019
12. Park I-S Seong S Jung Y Lee T Ahn J-H An J-K In-situ monitoring system equipped with FT-IR and QMS and thermal decomposition of Zr (NCH3C2H5) 4 precursor ECS Trans. 2016 75 6 123 128 10.1149/07506.0123ecst
13. Gordon PG Kurek A Barry ST Trends in copper precursor development for CVD and ALD applications ECS J Sol State Sci Technol. 2015 4 1 N3188 N3N97 10.1149/2.0261501jss
14. Huynh K Laneman SA Laxman R Gordon PG Barry ST New Zr-containing precursors for the atomic layer deposition of ZrO2 J Vac Sci Technol A: Vac, Sur, Films 2015 33 1 013001 10.1116/1.4901454
15. Gebhard M Mitschker F Wiesing M Giner I Torun B de los Arcos T, et al. An efficient PE-ALD process for TiO 2 thin films employing a new Ti-precursor J Materials Chem C. 2016 4 5 1057 1065 10.1039/C5TC03385C
16. Mai L Gebhard M de los Arcos T Giner I Mitschker F Winter M Unearthing [3-(Dimethylamino) propyl] aluminium (III) complexes as novel atomic layer deposition (ALD) precursors for Al2O3: synthesis, characterization and ALD process development Chem?A Eur J. 2017 23 45 10768 10772 10.1002/chem.201702939
17. Kaariainen TO Kemell M Vehkamaki M Kaariainen M-L Correia A Santos HA Surface modification of acetaminophen particles by atomic layer deposition Int J Pharmaceutics. 2017 525 1 160 174 10.1016/j.ijpharm.2017.04.031
18. Dualeh A Gao P Seok SI Nazeeruddin MK Gratzel M Thermal behavior of methylammonium lead-trihalide perovskite photovoltaic light harvesters Chem Materials. 2014 26 21 6160 6164 10.1021/cm502468k
19. Worzakowska M TG/DSC/FTIR/QMS studies on the oxidative decomposition of terpene acrylate homopolymers J Ther Anal Calorim. 2017 127 3 2025 2035 10.1007/s10973-016-5753-7
20. Niinisto J Rahtu A Putkonen M Ritala M Leskela M Niinisto L In situ quadrupole mass spectrometry study of atomic-layer deposition of ZrO2 using Cp2Zr (CH3) 2 and water Langmuir. 2005 21 16 7321 7325 10.1021/la0500732 16042461
21. Rahtu A Ritala M Integration of a quadrupole mass spectrometer and a quartz crystal microbalance for in situ characterization of atomic layer deposition processes in flow type reactors Proc Electrochem Soc. 2000 13 105 111
22. Knapas K Ritala M In situ studies on reaction mechanisms in atomic layer deposition Crit rev solid state mater sci. 2013 38 3 167 202 10.1080/10408436.2012.693460
23. Lien C Konh M Chen B Teplyakov AV Zaera F Gas-phase electron-impact activation of atomic layer deposition (ALD) precursors: MeCpPtMe3 J phys chem let. 2018 9 16 4602 4606 10.1021/acs.jpclett.8b02125 30067025
24. Niinisto J Mantymaki M Kukli K Costelle L Puukilainen E Ritala M Growth and phase stabilization of HfO2 thin films by ALD using novel precursors J Crystal Growth. 2010 312 2 245 249 10.1016/j.jcrysgro.2009.10.028
25. Leskela M Ritala M Atomic layer deposition (ALD): from precursors to thin film structures Thin solid films. 2002 409 1 138 146 10.1016/S0040-6090(02)00117-7
26. Bachmann J Atomic layer deposition in energy conversion applications: John Wiley & Sons 2017
27. Alcott GR van Mol A Spee C Evaluation of chemometric models in an FTIR study of the gas phase during atmospheric-pressure CVD of tin oxide thin films Chem Vapor Depos. 2000 6 5 261 268 10.1002/1521-3862(200010)6:5<261::AID-CVDE261>3.0.CO;2-9
28. Verkuijlen, R (2009) Atomic layer deposition of Ruthenium thin films using oxygen. https://research.tue.nl/en/studentTheses/atomic-layer-deposition-of-ruthenium-thin-films-using-oxygen . Accessed 31 Dec 2009.
29. Niinisto J, Putkonen M, Niinisto L, Kukli K, Ritala M, Leskela M (2004) Structural and dielectric properties of thin ZrO 2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor. J appl phys. 95(1):84?91
30. Niinisto J Kukli K Kariniemi M Ritala M Leskela M Blasco N Novel mixed alkylamido-cyclopentadienyl precursors for ALD of ZrO 2 thin films J Mater Chem. 2008 18 43 5243 5247 10.1039/b810922b
31. Chan Won D Rhee S-W Effect of process temperature on the structural and electrical properties of atomic layer deposited ZrO2 films using tris (dimethylamino) cyclopentadienyl zirconium precursor J Vac Sci Technol B 2014 32 3 03D102 10.1116/1.4825109
32. Monnier D Nuta I Chatillon C Gros-Jean M Volpi F Blanquet E Gaseous phase study of the Zr-organometallic ALD precursor TEMAZ by mass spectrometry J Electrochem Soc. 2009 156 1 H71 HH5 10.1149/1.3009595
33. Norton ET Amato-Wierda C Kinetic and mechanistic studies of the thermal decomposition of Ti (N (CH3) 2) 4 during chemical vapor deposition by in situ molecular beam mass spectrometry Chem materials. 2001 13 12 4655 4660 10.1021/cm0104708
34. Vollmerhaus R Tomaszewski R Shao P Taylor NJ Wiacek KJ Lewis SP Synthesis and structure of Group 4 iminophosphonamide complexes Organometallics. 2005 24 4 494 507 10.1021/om0492350
해당 논문의 주제분야에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.