참고문헌 (39)

1. 1. Chung K. Beak H. Tchoe Y. Oh H. Yoo H. Kim M. Yi G.-C. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes APL Mater. 2014 2 092512 10.1063/1.4894780 

   상세보기

2. 2. Shih H.-Y. Shiojiri M. Chen C.-H. Yu S.-F. Ko C.-T. Yang J.-R. Lin R.-M. Chen M.-J. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs Sci. Rep. 2015 5 13671 10.1038/srep13671 26329829 

   상세보기

3. 3. Jaros A. Hartmann J. Zhou H. Szafranski B. Strassburg M. Avramescu A. Waag A. Voss T. Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold Sci. Rep. 2018 8 11560 10.1038/s41598-018-29981-8 30068911 

   상세보기

4. 4. Du Chene J.S. Tagliabue G. Welch A.J. Cheng W.-H. Atwater H.A. Hot hole collection and photoelectrochemical CO2 reduction with plasmonic Au/p-GaN photocathodes Nano Lett. 2018 18 2545 2550 10.1021/acs.nanolett.8b00241 29522350 

   상세보기

5. 5. Jachalke S. Hofmann P. Leibiger G. Habel F.S. Mehner E. Leisegang T. Meyer D.C. Mikolajick T. The pyroelectric coefficient of free standing GaN grown by HVPE Appl. Phys. Lett. 2016 109 142906 10.1063/1.4964265 

   상세보기

6. 6. Ma H. He D. Lei L. Wang S. Chen Y. Wang H. GaN crystals prepared through solid-state metathesis reaction from NaGaO2 and BN under high pressure and high temperature J. Alloy. Compd. 2011 509 L124 L127 10.1016/j.jallcom.2010.12.087 

   상세보기

7. 7. Suihkonen S. Pimputkar S. Speck J.S. Nakamura S. Infrared absorption of hydrogen-related defects in ammonothermal GaN Appl. Phys. Lett. 2016 108 202105 10.1063/1.4952388 

   상세보기

8. 8. Takeuchi S. Asazu H. Imanishi M. Nakamura Y. Imade M. Mori Y. Sakai A. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN J. Appl. Phys. 2015 118 245306 10.1063/1.4939159 

   상세보기

9. 9. Li T. Ren G. Su X. Yao J. Yan Z. Gao X. Xu K. Growth behavior of ammonothermal GaN grown on nonpolar and semipolar HVPE GaN seeds CrystEngComm 2019 10.1039/C9CE00806C 

   상세보기

10. 10. Liu Z. Ren G. Shi L. Su X. Wang J. Xu K. Effect of carbon types on the generation and morphology of GaN polycrystals grown using the Na flux method CrystEngcomm 2015 17 1030 1036 10.1039/C4CE01899K 

    상세보기

11. 11. Cich M.J. Aldaz R.I. Chakraborty A. David A. Grundmann M.J. Tyagi A. Zhang M. Steranka F.M. Krames M.R. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density Appl. Phys. Lett. 2012 101 223509 10.1063/1.4769228 

    상세보기

12. 12. Kelly M.K. Vaudo R.P. Phanse V.M. Gorgens L. Ambacher O. Stutzmann M. Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff Jpn. J. Appl. Phys. 1999 38 L217 10.1143/JJAP.38.L217 

    상세보기

13. 13. Lee M. Yang M. Song K.M. Park S. InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate ACS Photonics 2018 5 1453 1459 10.1021/acsphotonics.7b01453 

    상세보기

14. 14. Lee M. Lee H.U. Song K.M. Kim J. Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes Sci. Rep. 2019 9 970 10.1038/s41598-019-38664-x 30700809 

    상세보기

15. 15. Lee M. Lee H. Song K. Kim J. Investigation of forward tunneling characteristics of InGaN/GaN blue light-emitting diodes on freestanding GaN detached from a Si substrate Nanomaterials 2018 8 543 10.3390/nano8070543 

    상세보기

16. 16. Lee M. Ahn C.W. Vu T.K.O. Lee H.U. Kim E.K. Park S. First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy Sci. Rep. 2019 9 7128 10.1038/s41598-019-43583-y 31073203 

    상세보기

17. 17. Zou X. Zhang X. Lu X. Tang C.W. Lau K.M. Fully vertical GaN pin diodes using GaN-on-Si epilayers IEEE Electron Device Lett. 2016 37 636 639 10.1109/LED.2016.2548488 

    상세보기

18. 18. Kumar A. Kashid R. Ghosh A. Kumar V. Singh R. Enhanced thermionic emission and low 1/f noise in exfoliated graphene/GaN Schottky barrier diode ACS Appl. Mater. Interfaces 2016 8 8213 8223 10.1021/acsami.5b12393 26963627 

    상세보기

19. 19. Singh R. Sharma P. Khan M.A. Garg V. Awasthi V. Kranti A. Mukherjee S. Investigation of barrier inhomogeneities and interface state density in Au/MgZnO: Ga Schottky contact J. Phys. D Appl. Phys. 2016 49 445303 10.1088/0022-3727/49/44/445303 

    상세보기

20. 20. Kumar A. Heilmann M. Latzel M. Kapoor R. Sharma I. Gobelt M. Christiansen S.H. Kumar V. Singh R. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes Sci. Rep. 2016 6 27553 10.1038/srep27553 27282258 

    상세보기

21. 21. Rajpalke M.K. Bhat T.N. Roul B. Kumar M. Krupanidhi S. Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction J. Appl. Phys. 2012 112 023706 10.1063/1.4739261 

    상세보기

22. 22. Reddeppa M. Park B.-G. Lee S.-T. Hai N.H. Kim M.-D. Oh J.-E. Improved Schottky behavior of GaN nanorods using hydrogen plasma treatment Curr. Appl. Phys. 2017 17 192 196 10.1016/j.cap.2016.11.025 

    상세보기

23. 23. Omotoso E. Meyer W.E. Auret F.D. Paradzah A.T. Diale M. Coelho S.M. van Rensburg P.J. The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes Mater. Sci. Semicond. Process. 2015 39 112 118 10.1016/j.mssp.2015.04.031 

    상세보기

24. 24. Sze S.M. Ng K.K. Physics of Semiconductor Devices John Wiley & Sons Hoboken, NJ, USA 2006 

25. 25. Crowell C. Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes Solid-State Electron. 1969 12 55 59 10.1016/0038-1101(69)90135-X 

    상세보기

26. 26. Hacke P. Detchprohm T. Hiramatsu K. Sawaki N. Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy Appl. Phys. Lett. 1993 63 2676 2678 10.1063/1.110417 

    상세보기

27. 27. Reddy V.R. Reddy N.N.K. Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies Superlattices Microstruct. 2012 52 484 499 10.1016/j.spmi.2012.06.004 

    상세보기

28. 28. Akkal B. Benamara Z. Abid H. Talbi A. Gruzza B. Electrical characterization of Au/n-GaN Schottky diodes Mater. Chem. Phys. 2004 85 27 31 10.1016/j.matchemphys.2003.11.007 

    상세보기

29. 29. Mattila T. Nieminen R.M. Point-defect complexes and broadband luminescence in GaN and AlN Phys. Rev. B 1997 55 9571 10.1103/PhysRevB.55.9571 

    상세보기

30. 30. Look D.C. Reynolds D. Fang Z.-Q. Hemsky J. Sizelove J. Jones R. Point defect characterization of GaN and ZnO Mater. Sci. Eng. B 1999 66 30 32 10.1016/S0921-5107(99)00115-4 

    상세보기

31. 31. Fang Z.-Q. Claflin B. Look D.C. Green D. Vetury R. Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers J. Appl. Phys. 2010 108 063706 10.1063/1.3488610 

    상세보기

32. 32. Cho H. Kim C. Hong C.-H. Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN J. Appl. Phys. 2003 94 1485 1489 10.1063/1.1586981 

    상세보기

33. 33. Hacke P. Detchprohm T. Hiramatsu K. Sawaki N. Tadatomo K. Miyake K. Analysis of deep levels in n-type GaN by transient capacitance methods J. Appl. Phys. 1994 76 304 309 10.1063/1.357144 

    상세보기

34. 34. Hierro A. Arehart A. Heying B. Hansen M. Speck J. Mishra U. DenBaars S. Ringel S. Capture kinetics of electron traps in MBE-grown n-GaN Phys. Status Solidi B 2001 228 309 313 10.1002/1521-3951(200111)228:1<309::AID-PSSB309>3.0.CO;2-N 

    상세보기

35. 35. Pak S.W. Lee D.U. Kim E.K. Park S.H. Joo K. Yoon E. Defect states of a-plane GaN grown on r-plane sapphire by controlled integration of silica nano-spheres J. Cryst. Growth 2013 370 78 81 10.1016/j.jcrysgro.2012.09.043 

    상세보기

36. 36. Peta K.R. Park B.-G. Lee S.-T. Kim M.-D. Oh J.-E. Kim T.-G. Reddy V.R. Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode Thin Solid Film 2013 534 603 608 10.1016/j.tsf.2013.01.100 

    상세보기

37. 37. Duc T.T. Pozina G. Janzen E. Hemmingsson C. Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy J. Appl. Phys. 2013 114 153702 10.1063/1.4825052 

    상세보기

38. 38. Fang Z. Look D.C. Visconti P. Lu C. Wang D. Morkoc H. Park S. Lee K. Characteristics of deep traps in freestanding GaN MRS Online Proc. Libr. Arch. 2001 693 10.1557/PROC-693-I6.55.1 

    상세보기

39. 39. Tokuda Y. Matuoka Y. Yoshida K. Ueda H. Ishiguro O. Soejima N. Kachi T. Evaluation of dislocation-related defects in GaN using deep-level transient spectroscopy Phys. Status Solidi C 2007 4 2568 2571 10.1002/pssc.200674704 

    상세보기

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