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NTIS 바로가기IEEE access : practical research, open solutions, v.8, 2020년, pp.149984 - 149998
Song, Taigon (School of Electronics Engineering, Kyungpook National University (KNU), Daegu, South Korea)
The GAAFET (gate-all-around FET) is expected to replace FinFETs in future nodes due to its excellent channel controllability. It is also expected to be an impressive device due to its horizontal or vertical transistor structures. Vertical GAAFETs (V-FETs) are expected to be a promising device compar...
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