[논문]Optimized annealing conditions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications

Kim, Yeriaron; Woo, Jiyong; Im, Solyee; Lee, Yeseul; Kim, Jeong Hun; Im, Jong-Pil; Suh, Dongwoo; Yang, Sang Mo; Yoon, Sung-Min; Moon, Seung Eon

doi:10.1016/j.cap.2020.09.013

[국내논문] Optimized annealing conditions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications

Current applied physics : the official journal of the Korean Physical Society, v.20 no.12, 2020년, pp.1441 - 1446

Kim, Yeriaron (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Woo, Jiyong (School of Electronics Engineering, Kyungpook National University) , Im, Solyee (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Lee, Yeseul (Department of Physics, Sookmyung Women's University) , Kim, Jeong Hun (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Im, Jong-Pil (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Suh, Dongwoo (ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute) , Yang, Sang Mo (Department of Physics, Sogang University) , Yoon, Sung-Min (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) , Moon, Seung Eon (ICT Cr)

Abstract ▼ AI-Helper

Abstract In this paper, we report stable polarization switching in metal-HfZrOx (HZO)-metal capacitors when pulses are repeatedly applied from the initial state. By examining various process parameters including annealing method, annealing temperature, and annealing time, we investigated the optimal conditions for realizing ferroelectricity in HZO layers deposited by sputtering systems. More specifically, we examined how polarization behaviors evolved as a function of annealing temperatures. Our results showed that annealing HZO capped by a top electrode, when annealing temperature was higher than 850 °C, drives the transformation to large quantities of orthorhombic phases, and enables constant remnant polarization without the fluctuations caused by wake-up and fatigue. We continued to observe stable polarization up to 108 cycles with a pulse width of 5 μs. Highlights Effect of annealing condition on ferroelectricity of HZO thin film was investigated. The optimized annealing condition for Pt/HZO/TiN capacitor was PMA condition at 850 °C in 30 s with N2. Reliable endurance behavior up to 108 cycles was observed driven by repeated cycles with a pulse width of 5 μs. Graphical abstract [DISPLAY OMISSION]

Keyword

참고문헌 (37)

IEDM Muller 13 2013 Ferroelectric Hafnium Oxide: a CMOS-compatible and highly scalable approach to future ferroelectric memories
J. Solid State Sci. Technol. Muller 4 N30 2015 10.1149/2.0081505jss Ferroelectric hafnium oxide based materials and devices: assessment of current status and future prospects

상세보기
IEDM Dunkel 17 2017 A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Nano Lett. Muller 12 4318 2012 10.1021/nl302049k Ferroelectricity in simple binary ZrO2 and HfO2

상세보기
Appl. Phys. Lett. Park 102 112914 2013 10.1063/1.4798265 Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

상세보기
Appl. Phys. Lett. Boscke 99 102903 2011 10.1063/1.3634052 Ferroelectricity in hafnium oxide thin films

상세보기
J. Mater. Chem. C Starschich 5 333 2017 10.1039/C6TC04807B An extensive study of the influence of dopants on the ferroelectric properties of HfO2

상세보기
Adv. Funct. Mater. Muller 22 2412 2012 10.1002/adfm.201103119 Incipient ferroelectricity in Al-doped HfO2 thin films

상세보기
J. Appl. Phys. Muller 110 114113 2011 10.1063/1.3667205 Ferroelectricity in yttrium-doped hafnium oxide

상세보기
Yurchuk vol. 533 88 2013
Toriumi 103 2019 Ferroelectric Films by Physical Vapor Deposition and Ion Implantation (Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices)
Appl. Phys. Lett. Park 107 192907 2015 10.1063/1.4935588 Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

상세보기
Appl. Phys. Lett. Kim 113 182903 2018 10.1063/1.5052012 Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors

상세보기
Appl. Phys. Rev. Schenk 1 2014 10.1063/1.4902396 About the deformation of ferroelectric hysteresis

상세보기
Nanoscale Kim 8 1383 2016 10.1039/C5NR05339K A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement

상세보기
Appl. Mater. Interfaces Schenk 6 19744 2014 10.1021/am504837r Milan Pe？ic, mihaela popovici, yuriy V. Pershin, and T. Mikolajick, electric field cycling behavior of ferroelectric hafnium oxide

상세보기
Adv. Funct. Mater. Pe？ic 26 4601 2016 10.1002/adfm.201600590 Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors

상세보기
IEEE Trans. Electron. Dev. Muller 60 4199 2013 10.1109/TED.2013.2283465 From MFM capacitors toward ferroelectric transistors: endurance and disturb characteristics of HfO2-based FeFET devices

상세보기
IEEE Trans. Electron. Dev. Ali 65 3769 2018 10.1109/TED.2018.2856818 High endurance ferroelectric hafnium oxide-based FeFET memory without retention penalty

상세보기
IEEE Trans. Electron. Dev. Ni 65 2461 2018 10.1109/TED.2018.2829122 Critical role of interlayer in Hf0.5Zr0.5O2 ferroelectric FET nonvolatile memory performance

상세보기
IEEE Electron. Device Lett. Xiao 40 714 2019 10.1109/LED.2019.2903641 Min liao, and yichun zhou, performance improvement of Hf0.5Zr0.5O2-based ferroelectric-field-effect transistors with ZrO2 seed layers

상세보기
IEEE Electron. Device Lett. Chen 40 399 2019 10.1109/LED.2019.2896231 Non-volatile ferroelectric FETs using 5-nm Hf0.5Zr0.5O2 with high data retention and read endurance for 1T memory applications

상세보기
Microelectron. Eng. Kim 178 48 2017 10.1016/j.mee.2017.04.031 Optimizing process conditions for improved Hf1 ？ xZrxO2 ferroelectric capacitor performance

상세보기
Vac. Sci. Technol. B Yoon 37 2019 Polarization switching kinetics of the ferroelectric Al-doped HfO2 thin films prepared by atomic layer deposition with different ozone doses
Ceram. Int. Chio 45 22642 2019 10.1016/j.ceramint.2019.07.297 Film thickness-dependent ferroelectric polarization switching dynamics of undoped HfO2 thin films prepared by atomic layer deposition

상세보기
Curr. Appl. Phys. Ryu 19 1383 2019 10.1016/j.cap.2019.09.003 Crystallization annealing effects on ferroelectric properties of Al-Doped HfO2 thin film capacitors using indium-tin-oxide electrodes

상세보기
Jpn. J. Appl. Phys. Na 58 2019 10.7567/1347-4065/ab2c62 Characterization of metal-ferroelectric-metal-insulator-semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

상세보기
Phys. Lett. Olsen 101 2012 Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties, Appl
Nanotechnology Lee 28 305703 2017 10.1088/1361-6528/aa7624 Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

상세보기
Appl. Phys. Lett. Fan 108 232905 2016 10.1063/1.4953461 Ferroelectricity and ferroelectric resistive switching in sputtered Hf0.5Zr0.5O2 thin films

상세보기
IEEE Electron. Device Lett. Luo 40 570 2019 10.1109/LED.2019.2902609 Composition-dependent ferroelectric properties in sputtered HfXZr1？XO2 thin films

상세보기
ECS J. Solid State Sci. Technol Liu 8 553 2019 10.1149/2.0041910jss Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

상세보기
IEEE Electron. Device Lett. Woo 41 232 2020 10.1109/LED.2019.2959802 Improved ferroelectric switching in sputtered HfZrOx device enabled by high pressure annealing

상세보기
J. Phys. D Appl. Phys. Min 40 115109 2019 Design strategies for improvement in nonvolatile memory characteristics of metal-ferroelectric-metal-insulator semiconductor capacitors using ferroelectric Hf0.5Zr0.5O2 thin films
Microelectron. Eng. Chernikova 147 15 2015 10.1016/j.mee.2015.04.024 Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

상세보기
IEEE Electron. Device Lett. Cao 39 1207 2018 10.1109/LED.2018.2846570 Effects of capping electrode on ferroelectric properties of Hf0.5Zr0.5O2 thin films

상세보기
J. Vac. Sci. Technol. B Lin 36 2018 10.1116/1.5002558 Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers

상세보기

LOADING...

활용도 분석정보

상세보기

다운로드

내보내기

활용도 Top5 논문

해당 논문의 주제분야에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 논문명, 저널/프로시딩명, 저자 , 발행년, 권, 호, 시작페이지, 끝페이지, 발행기관 관리번호, 논문명, 대등논문명, 저자 , 저널/프로시딩명, 발행기관, 발행년, 발행언어, 권, 호, 시작페이지, 끝페이지, ISBN, ISSN, 주제분야, 키워드, 초록(한글), 초록(영문), 저자(소속기관)
저장형식	Text(ASCII format) Excel format RefWorks Direct Export RIS format (for Reference Manager, ProCite, EndNote), Scholar's Aids, Mendeley
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

[국내논문] Optimized annealing conditions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications

Abstract ▼ AI-Helper

Keyword

참고문헌 (37)

이 논문을 인용한 문헌

연구과제 타임라인

활용도 분석정보

활용도 Top5 논문

관련 콘텐츠

원문 URL 링크

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트

연합인증

[국내논문] Optimized annealing conditions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications

Abstract ▼ AI-Helper

Keyword

참고문헌 (37)

이 논문을 인용한 문헌

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

전체(0) 논문(0) 특허(0) 보고서(0)

활용도 분석정보

활용도 Top5 논문 더보기

관련 콘텐츠

원문 URL 링크

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트

활용도 Top5 논문