참고문헌 (25)

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5. 5. Chiu H.-C. Yang C.-W. Chen C.-H. Fu J.S. Chien F.-T. Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N 2 O plasma oxidation technology Appl. Phys. Lett. 2011 99 153508 10.1063/1.3651331 

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8. 8. Lee F. Su L.-Y. Wang C.-H. Wu Y.-R. Huang J. Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors IEEE Electron Device Lett. 2015 36 232 234 10.1109/LED.2015.2395454 

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15. 15. Li S. Hu Q. Wang X. Li T. Li X. Wu Y. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO x as Gate Dielectric IEEE Electron Device Lett. 2019 40 295 298 10.1109/LED.2018.2888486 

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