[논문]Enhanced Triboelectric Nanogenerator Based on Tungsten Disulfide via Thiolated Ligand Conjugation

Kim, Tae In; Park, Ick-Joon; Kang, Sumin; Kim, Taek-Soo; Choi, Sung-Yool

doi:10.1021/acsami.1c02562

[해외논문] Enhanced Triboelectric Nanogenerator Based on Tungsten Disulfide via Thiolated Ligand Conjugation

ACS applied materials & interfaces, v.13 no.18, 2021년, pp.21299 - 21309

Kim, Tae In (School of Electrical Engineering, Graphene) , Park, Ick-Joon (Department of Electrical and Electronic Engineering , Joongbu University , Goyang 10279 , Korea) , Kang, Sumin (Department of Mechanical Engineering , Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141 , Korea) , Kim, Taek-Soo (Department of Mechanical Engineering , Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141 , Korea) , Choi, Sung-Yool

Abstract ▼ AI-Helper

Two-dimensional transition-metal dichalcogenides (TMDs) are of particular interest as a new active material for future triboelectric nanogenerators (TENGs) owing to their excellent electrical properties, optical transparency, flexibility, ultrathin thickness, and biocompatibility. Here, we propose a new approach to engineer the surface of TMDs via conjugation with thiolated ligands having different alkane chain lengths and to develop TMD-based TENG devices that exhibit enhanced output performance for the first time. The triboelectric charging behaviors of ligand-conjugated TMDs are successfully investigated, and the electrical output performance of TMD TENGs based on TMD-to-polymer device geometries with a vertical contact-separation mode is dramatically improved, exhibiting an output voltage of 12.2 V and a power density of 138 mW/m2. Furthermore, the ligand-conjugated TMD TENG device exhibits a highly stable operation under repeated contact and separation over 10 000 cycles, as well as high chemical stability, as a result of novel defect engineering via thiolated ligand conjugation. Detailed investigation reveals that the improved performance of the ligand-conjugated TMD TENG device originates from the synergistic effect of defect engineering and the p-type doping effect of TMDs, correlated with the increased electric potential difference between triboelectric layers. These findings provide a new potential of TMDs as a promising building block for the next-generation energy harvesting system.[FIG OMISSION]

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