참고문헌 (32)

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15. 15. Balachander K. Arulkumaran S. Ishikawa H. Baskar K. Egawa T. Studies on electron beam evaporated ZrO 2 /AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors Phys. Status Solidi 2005 202 R16 R18 10.1002/pssa.200409084 

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16. 16. Chang S.J. Jung H.W. Do J.W. Cho K.J. Kim J.J. Jang Y.J. Yoon H.S. Ahn H.K. Min B.G. Kim H. Enhanced carrier transport properties in GaN-Based metal-insulator-semiconductor high electron mobility transistor with SiN/Al 2 O 3 Bi-layer passivation ECS J. Solid State Sci. Technol. 2018 7 N86 N90 10.1149/2.0241806jss 

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17. 17. Anand M.J. Ng G.I. Vicknesh S. Arulkumaran S. Ranjan K. Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al 2 O 3 dielectric gate stack Phys. Status Solidi 2013 10 1421 1425 

18. 18. Keum D. Kim H. Energy-dependent degradation characteristics of AlGaN/GaN MIS-HEMTs with 1, 1.5, and 2 MeV proton irradiation ECS J. Solid State Sci. Technol. 2018 7 Q159 Q163 10.1149/2.0021809jss 

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19. 19. Sun X. Saadat O.I. Chen J. Zhang E.X. Cui S. Palacios T. Fleetwood D.M. Ma T.P. Total-ionizing？dose effects in AlGaN/GaN HEMTs and MOS-HEMTs IEEE Trans. Nucl. Sci. 2013 60 4074 4079 10.1109/TNS.2013.2278314 

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20. 20. Ahn S. Kim B.J. Lin Y.H. Ren F. Pearton S. Yang G. Kravchenko I.I. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al 2 O 3 gate oxide J. Vac. Sci. Technol. B 2016 34 051202 10.1116/1.4959786 

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21. 21. Bhuiyan M.A. Zhou H. Chang S.J. Lou X. Gong X. Jiang R. Gong H. Zhang E.X. Won C. Lim J.W. Total-Ionizing-Dose responses of GaN-Based HEMTs with different channel thicknesses and MOSHEMTs with epitaxial MgCaO as gate dielectric IEEE Trans. Nucl. Sci. 2018 65 46 52 10.1109/TNS.2017.2774928 

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22. 22. Gao Z. Romero M.F. Redondo-Cubero A. Pampillon M.A. Andres E.S. Calle F. Effects of Gd 2 O 3 Gate dielectric on proton-irradiated AlGaN/GaN HEMTs IEEE Electron Device Lett. 2017 38 611 614 10.1109/LED.2017.2682795 

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24. 24. Aktas O. Kuliev A. Kumar V. Schwindt R. Toshkov S. Costescu D. Stubbins J. Adesida I. 60 Co gamma radiation effects on DC, RF, and pulsed I？V characteristics of AlGaN/GaN HEMTs Solid-State Electron. 2004 48 471 475 10.1016/j.sse.2003.08.003 

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25. 25. Kaya S. Yildiz I. Lok R. Yilmaz E. Co-60 gamma irradiation influences on physical, chemical and electrical characteristics of HfO 2 /Si thin films Radiat. Phys. Chem. 2018 150 64 70 10.1016/j.radphyschem.2018.04.023 

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27. 27. Chang S.J. Bhuiyan M.A. Won C.H. Lee J.H. Jung H.W. Shin M.J. Lim J.W. Ma T.P. Dependence of GaN channel thickness on the transistor characteristics of AlGaN/GaN HEMTs grown on sapphire ECS J. Solid State Sci. Technol. 2016 5 N102 N107 10.1149/2.0221612jss 

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29. 29. Hezel R. Schorner R. Plasma Si nitride？A promising dielectric to achieve high-quality silicon MIS-IL solar cells J. Appl. Phys. 1981 52 3076 3079 10.1063/1.329058 

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30. 30. Sharma V. Tracy C.J. Schroder D.K. Herasimenka S. Dauksher W.J. Bowden S. Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells Appl. Phys. Lett. 2014 104 053503 10.1063/1.4863829 

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31. 31. Dong P. Yu X. Ma Y. Xie M. Li Y. Huang C. Li M. Dai G. Zhang J. A deep-level transit spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon AIP Adv. 2017 7 085112 10.1063/1.4996992 

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32. 32. Chang S.J. Kang H.S. Lee J.H. Yang J. Bhuiyan M. Jo Y.W. Cui S. Lee J.H. Ma T.P. Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors Jpn. J. Appl. Phys. 2016 55 44104 10.7567/JJAP.55.044104 

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