[논문]Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode

Jang, Junho; Song, Jaeman; Lee, Seung S.; Jeong, Sangkwon; Lee, Bong Jae; Kim, Sanghyeon

doi:10.1016/j.mssp.2021.105882

[해외논문] Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode

Materials science in semiconductor processing, v.131, 2021년, pp.105882 -

Jang, Junho (School of Electrical Engineering, Korea Advanced Institute of Science and Technology) , Song, Jaeman (Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology) , Lee, Seung S. (Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology) , Jeong, Sangkwon (Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology) , Lee, Bong Jae (Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology) , Kim, Sanghyeon (School of Electrical Engineering, Korea Advanced Institute of Science and Technology)

Abstract ▼ AI-Helper

Abstract Gallium antimonide (GaSb) has been widely used for optoelectronic devices in recent years, but the current transport mechanism at the metal-GaSb junction has not yet been clearly identified. In this work, current-voltage (I-V) characteristics of Au/n-GaSb Schottky diodes were analyzed over a wide temperature range (80–340 K) to investigate their current transport mechanisms. Based on the theory that the total current is described as a contribution of several current mechanisms, the measured I-V curves were separated into two components: thermionic emission (TE) current and secondary current. For the TE current, which is the primary current for general Schottky diodes, Schottky diode parameters were extracted and the inhomogeneity of the Schottky barrier was quantified using the temperature dependence of the parameters. For the secondary current, a temperature-dependent predominance between tunneling and Shockley-Read-Hall (SRH) recombination currents was identified by comparing a coefficient of the secondary current with the tunneling coefficient and 2kT. We also revealed that other current transport mechanisms such as Auger and radiative recombination, and leakage currents are negligible for the Au/n-GaSb Schottky diodes in this work. The methodology suggested in this study can be applied for detailed characterization of various Schottky diodes of which the current transport mechanisms are unidentified.

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참고문헌 (47)

Appl. Phys. Lett. Lin 96 12 2010 10.1063/1.3371803 Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

상세보기
Appl. Phys. Lett. Delorme 110 22 2017 10.1063/1.4984799 GaSbBi/GaSb quantum well laser diodes

상세보기
Nano Lett. Memisevic 17 7 4373 2017 10.1021/acs.nanolett.7b01455 Indi- vidual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mv/decade

상세보기
IEEE J. Electron. Dev. Soc. Kim 9 42 2020 10.1109/JEDS.2020.3039370 High hole mobility and low leakage thin-body (In)GaSb p-MOSFETs grown on high-bandgap AlGaSb

상세보기
Lu 2017 2017 IEEE Inter- National Electron Devices Meeting (IEDM) 10-nm fin-width InGaSb p-channel self-aligned Fin- FETs using antimonide-compatible digital etch
Appl. Phys. Lett. Haddadi 110 10 2017 10.1063/1.4978378 Ex- tended short-wavelength infrared nBn photodetectors based on type- II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier

상세보기
Nano Lett. Sun 19 9 5920 2019 10.1021/acs.nanolett.9b01503 Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors

상세보기
Adv. Energy Mater. Lumb 7 20 2017 10.1002/aenm.201700345 GaSb-based solar cells for full solar spec- trum energy harvesting

상세보기
Appl. Phys. Lett. Juang 106 11 2015 10.1063/1.4915258 GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

상세보기
Mater. Lett. Barman 10 4-5 203 1990 10.1016/0167-577X(90)90089-5 Improved junction properties of Au-n-GaSb Schottky diodes after chemical modification of GaSb surfaces

상세보기
Appl. Phys. Lett. Dutta 65 13 1695 1994 10.1063/1.112889 Sulphur passivation of gallium antimonide surfaces

상세보기
J. Electron. Mater. Pérotin 23 1 7 1994 10.1007/BF02651260 Passivation of GaSb by sulfur treatment

상세보기
J. Appl. Phys. Dutta 77 9 4825 1995 10.1063/1.359407 Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide

상세보기
Jpn. J. Appl. Phys. Eftekhari 35 2A 564 1996 10.1143/JJAP.35.564 Effects of sulfur passivation of GaSb on the thermal stability of Al/n-GaSb contacts

상세보기
J. Vac. Sci. Technol. B Liu 21 1 71 2003 10.1116/1.1532023 Chemical and structural characterization of GaSb (100) surfaces treated by HCl-based solu- tions and annealed in vacuum

상세보기
Appl. Phys. Lett. Liu 85 19 4391 2004 10.1063/1.1815073 Improved characteristics for Au/n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation

상세보기
Appl. Surf. Sci. Murape 258 18 6753 2012 10.1016/j.apsusc.2012.03.045 Treatment for GaSb surfaces using a sulphur blended (NH4)2S/(NH4)2SO4 solution

상세보기
J. Phys. Chem. C Lebedev 117 31 15996 2013 10.1021/jp401942p Sulfur passivation of GaSb (100) surfaces: compari- son of aqueous and alcoholic sulfide solutions using synchrotron radi- ation photoemission spectroscopy

상세보기
APEX Zhao 6 5 2013 Effects of sulfur passivation on GaSb Metal-Oxide-Semiconductor capacitors with neutralized and unneutralized (NH4)2S solutions of varied con- centrations
Mater. Sci. Semicond. Process. Tao 40 685 2015 10.1016/j.mssp.2015.07.048 Improved surface and electrical properties of passivated GaSb with less alkaline sulfide solution

상세보기
IEEE Trans. Electron. Dev. Nagao 28 4 407 1981 10.1109/T-ED.1981.20355 GaSb Schottky diodes for infrared detectors

상세보기
J. Appl. Phys. Rotelli 81 4 1813 1997 10.1063/1.364065 Photoelectric properties of GaSb Schottky diodes

상세보기
Jpn. J. Appl. Phys. Lin 39 5A L400 2000 10.1143/JJAP.39.L400 Temperature dependence of barrier height and energy bandgap in Au/n-GaSb Schottky diode

상세보기
Interf. Surf. Sci. Oueini 409 3 445 1998 10.1016/S0039-6028(98)00212-X Formation of the Al-GaSb (110)

상세보기
IEEE Trans. Electron. Dev. Subekti 45 10 2247 1998 10.1109/16.725261 Tunneling transport in Al-n-GaSb Schottky diodes

상세보기
J. Appl. Phys. Su 68 2 646 1990 10.1063/1.346793 The effect of annealing temperature on electrical properties of Pd/n-GaSb Schottky contacts

상세보기
Mater. Sci. Semicond. Process. Huang 16 2 418 2013 10.1016/j.mssp.2012.08.011 The electrical characteristics of Ni/n-GaSb Schottky diode

상세보기
J. Appl. Phys. Nishi 115 3 2014 10.1063/1.4862486 Study on electrical properties of metal/GaSb junctions us- ing metal-GaSb alloys

상세보기
APEX Zota 5 7 2012 Characterization of Ni-GaSb alloys formed by direct reaction of Ni with GaSb
J. Appl. Phys. Gümüş 91 1 245 2002 10.1063/1.1424054 Temperature dependent bar- rier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs

상세보기
Solid State Electron. Kumar 50 11-12 1835 2006 10.1016/j.sse.2006.09.004 Temperature- dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

상세보기
Physica B Mtangi 404 8-11 1092 2009 10.1016/j.physb.2008.11.022 Analysis of temperature dependent I-V measure- ments on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

상세보기
J. Appl. Phys. Yıldırım 108 11 2010 10.1063/1.3517810 On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts

상세보기
J. Appl. Phys. Yüksel 110 2 2011 10.1063/1.3610394 A detailed analysis of current-voltage characteristics of Au/perylene- monoimide/n-Si Schottky barrier diodes over a wide temperature range

상세보기
J. Optoelectron. Adv. Mater. Korucu 14 1 41 2012 Temperature-dependent current- conduction mechanisms in Au/n-InP Schottky barrier diodes (SBDs)

상세보기
Physica B Korucu 414 35 2013 10.1016/j.physb.2013.01.010 Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's model

상세보기
J. Semiconduct. Zeghdar 36 12 2015 10.1088/1674-4926/36/12/124002 Inhomoge- neous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

상세보기
AIP Adv. Mahato 7 8 2017 10.1063/1.4993553 Analysis of temperature dependent current-voltage and capacitance- voltage characteristics of an Au/V2O5/n-Si Schottky diode

상세보기
Solid St. Electron. Crowell 12 2 89 1969 10.1016/0038-1101(69)90117-8 Normalized thermionic-field (TF) emission in metal-semiconductor (Schottky) barriers

상세보기
Sze 2006 Physics of Semiconductor Devices
Solid State Electron. Donoval 34 12 1365 1991 10.1016/0038-1101(91)90031-S Analysis of I-V measurements on PtSi-Si Schottky structures in a wide temperature range

상세보기
Appl. Phys. Lett. Donoval 96 22 2010 10.1063/1.3442486 Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

상세보기
J. Appl. Phys. Donoval 109 6 2011 10.1063/1.3560919 Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

상세보기
J. Appl. Phys. Werner 69 3 1522 1991 10.1063/1.347243 Barrier inhomogeneities at Schottky contacts

상세보기
Solid State Electron. Padovani 9 7 695 1966 10.1016/0038-1101(66)90097-9 Field and thermionic-field emission in Schottky barriers

상세보기
Levinshtein vol. 1 1997
J. Appl. Phys. Takeshima 43 10 4114 1972 10.1063/1.1660882 Auger recombination in InAs, GaSb, InP, and GaAs

상세보기

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DOI : 10.1016/j.mssp.2021.105882
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