[논문]The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

Lee, Yongsun; Goh, Youngin; Hwang, Junghyeon; Das, Dipjyoti; Jeon, Sanghun

doi:10.1109/ted.2020.3046173

[해외논문] The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

IEEE transactions on electron devices, v.68 no.2, 2021년, pp.523 - 528

Lee, Yongsun (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Goh, Youngin (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Hwang, Junghyeon (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Das, Dipjyoti (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea) , Jeon, Sanghun (Korea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, South Korea)

Abstract ▼ AI-Helper

In recent years, several experimental approaches have been adopted to study and understand the mechanism and improve the ferroelectricity of fluorite-type hafnia-based ferroelectric materials. In this regard, significant efforts have been made to elucidate the role of top electrode and bottom electrode (TE and BE) materials in defining the ferroelectricity in such systems, especially in terms of induced mechanical tensile stress by these materials during the process of annealing. However, the effect of the electrode material was not investigated both at TE and BE, and despite numerous efforts, there is still a lack of accurate and systematic understanding. In this report, we have carried out a systematic investigation on the effect of TE and BE materials having different coefficient of thermal expansion (CTE), by changing the electrode material one at a time, both at the top and bottom. The influence of the TE was confirmed using [TE/Hf0.5Zr0.5O2(HZO)/TiN] structure in which the BE was fixed as TiN, and the influence of the BE was confirmed using [TiN/HZO/BE] structure by fixing TiN as the TE. As revealed by polarization versus electric field and residual stress analysis, smaller CTE of the electrode was found to result in higher tensile stress in the HZO films during the annealing process, facilitating the formation of higher ferroelectric o-phase and thereby resulting in greater ferroelectricity. Although the influence of TE and BE on the ferroelectric property of HZO films was found to show similar trends according to the CTE value of the electrodes, the influence of TE on the ferroelectric property of the HZO capacitors is found to be mainly due to the variation in the induced mechanical tensile stress; pulse switching measurement and X-ray photoelectron spectrometer (XPS) analysis suggest that in case of BE, both the induced mechanical tensile stress and the interfacial dead layer were found to play a significant part. As a result, BE was found to have a greater influence on ferroelectricity of the HZO capacitors when compared with that of TE. The highest remnant polarization of 48.2 and $58.7~\mu \text{C}$/cm2 was obtained for W with the lowest of CTE of $4.5\times 10^{-6}/^{\circ }\text{C}$ in both the configurations. The results obtained in this article are expected to provide a new way out to optimize the interface quality and ferroelectricity in HZO-based capacitors.

참고문헌 (38)

Das, Dipjyoti, Kim, Taeho, Gaddam, Venkateswarlu, Shin, Changhwan, Jeon, Sanghun. Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf_0.5Zr_0.5O₂ bilayer system. Solid-state electronics, vol.174, 107914-.

상세보기
Sci Papers Bureau Stand Thermal expansion of molybdenm hidnert 1924 488 19
10.6028/nbsscipaper.203
Gondal, M. A, Fasasi, T. A, Baig, Umair, Mekki, A. Effects of Oxidizing Media on the Composition, Morphology and Optical Properties of Colloidal Zirconium Oxide Nanoparticles Synthesized via Pulsed Laser Ablation in Liquid Technique. Journal of nanoscience and nanotechnology, vol.18, no.6, 4030-4039.

상세보기
Sokolov, Andrey Sergeevich, Jeon, Yu-Rim, Kim, Sohyeon, Ku, Boncheol, Lim, Donghwan, Han, Hoonhee, Chae, Myeong Gyoon, Lee, Jaeho, Ha, Beom Gil, Choi, Changhwan. Influence of oxygen vacancies in ALD HfO_2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO_2-x/Pt structure. Applied surface science, vol.434, 822-830.

상세보기
Kim, Taeho, An, Minho, Jeon, Sanghun. Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate. AIP advances, vol.10, no.1, 015104-.

상세보기
Hwang, Junghyeon, Goh, Youngin, Jeon, Sanghun. Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.41, no.8, 1193-1196.

상세보기
Missouri Library Learn Resour Thermal expansion of nickel and iron, and the influence of nitrogen on the lattice parameter of iron at the Curie temperature hwang 1972 5049 30
William Andrew Handbook of refractory carbides and nitrides: Properties, characteristics, processing, and applications pierson 1996 193
ECS J Solid State Sci Technol Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects müller 2015 10.1149/2.0081505jss 4 30n

상세보기
Schroeder, Uwe, Yurchuk, Ekaterina, Müller, Johannes, Martin, Dominik, Schenk, Tony, Polakowski, Patrick, Adelmann, Christoph, Popovici, Mihaela I., Kalinin, Sergei V., Mikolajick, Thomas. Impact of different dopants on the switching properties of ferroelectric hafniumoxide. Japanese journal of applied physics, vol.53, no.8, 08LE02-.

상세보기
Das, Dipjyoti, Jeon, Sanghun. High-k Hf_xZr_1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal. IEEE transactions on electron devices, vol.67, no.6, 2489-2494.

상세보기
Shiraishi, Takahisa, Katayama, Kiliha, Yokouchi, Tatsuhiko, Shimizu, Takao, Oikawa, Takahiro, Sakata, Osami, Uchida, Hiroshi, Imai, Yasuhiko, Kiguchi, Takanori, Konno, Toyohiko J., Funakubo, Hiroshi. Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films. Applied physics letters, vol.108, no.26, 262904-.

상세보기
Lomenzo, Patrick D., Takmeel, Qanit, Zhou, Chuanzhen, Fancher, Chris M., Lambers, Eric, Rudawski, Nicholas G., Jones, Jacob L., Moghaddam, Saeed, Nishida, Toshikazu. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films. Journal of applied physics, vol.117, no.13, 134105-.

상세보기
Goh, Youngin, Cho, Sung Hyun, Park, Sang-Hee Ko, Jeon, Sanghun. Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO₂ Electrode. IEEE transactions on electron devices, vol.67, no.8, 3431-3434.

상세보기
Das, Dipjyoti, Gaddam, Venkateswarlu, Jeon, Sanghun. Demonstration of High Ferroelectricity (P $_{{r}}$ ~ 29 $\mu$C/cm²) in Zr Rich Hf_xZr_1–xO₂ Films. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.41, no.1, 34-37.

상세보기
Gaddam, Vekateswarlu, Das, Dipjyoti, Jeon, Sanghun. Insertion of HfO₂ Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors. IEEE transactions on electron devices, vol.67, no.2, 745-750.

상세보기
Kim, Si Joon, Narayan, Dushyant, Lee, Jae-Gil, Mohan, Jaidah, Lee, Joy S., Lee, Jaebeom, Kim, Harrison S., Byun, Young-Chul, Lucero, Antonio T., Young, Chadwin D., Summerfelt, Scott R., San, Tamer, Colombo, Luigi, Kim, Jiyoung. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget. Applied physics letters, vol.111, no.24, 242901-.

상세보기
Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Schenk, Tony, Lee, Woongkyu, Kim, Keum Do, Fengler, Franz P. G., Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong. Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment. Nanoscale, vol.9, no.28, 9973-9986.

상세보기
Kim, Han Joon, Park, Min Hyuk, Kim, Yu Jin, Lee, Young Hwan, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Hwang, Cheol Seong. A study on the wake-up effect of ferroelectric Hf_0.5Zr_0.5O₂films by pulse-switching measurement. Nanoscale, vol.8, no.3, 1383-1389.

상세보기
Mikolajick, Thomas, Müller, Stefan, Schenk, Tony, Yurchuk, Ekaterina, Slesazeck, Stefan, Schröder, Uwe, Flachowsky, Stefan, van Bentum, Ralf, Kolodinski, Sabine, Polakowski, Patrick, Müller, Johannes. Doped Hafnium Oxide - An Enabler for Ferroelectric Field Effect Transistors. Advances in science and technology, vol.95, 136-145.

상세보기
Lange’s Handbook of Chemistry dean 2005
Ko, Eunah, Shin, Jaemin, Shin, Changhwan. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors. Nano convergence, vol.5, no.1, 2-.

상세보기
Goh, Youngin, Jeon, Sanghun. The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO₂. Nanotechnology, vol.29, no.33, 335201-.

상세보기
Kim, Taeho, Jeon, Sanghun. Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing. IEEE transactions on electron devices, vol.65, no.5, 1771-1773.

상세보기
Yoon, Chankeun, Moon, Seungjun, Shin, Changhwan. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor. Nano convergence, vol.7, 19-.

상세보기
Kim, Tae Yun, Kim, Sung Kyun, Kim, Sang-Woo. Application of ferroelectric materials for improving output power of energy harvesters. Nano convergence, vol.5, no.1, 30-.

상세보기
10.1109/IEDM.2017.8268425
Proc IEEE Int Memory Workshop (IMW) Ferroelectric deep trench capacitors based on al:HfO2 for 3D nonvolatile memory applications polakowski 2014 1
Appl Phys Lett Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature park 2013 102

상세보기
Böscke, T. S., Müller, J., Bräuhaus, D., Schröder, U., Böttger, U.. Ferroelectricity in hafnium oxide thin films. Applied physics letters, vol.99, no.10, 102903-.

상세보기
Wang, Chun-Yuan, Wang, Chin-I, Yi, Sheng-Han, Chang, Teng-Jan, Chou, Chun-Yi, Yin, Yu-Tung, Shiojiri, Makoto, Chen, Miin-Jang. Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO₂ thin films by the TiN capping engineering. Materials & Design, vol.195, 109020-.

상세보기
Cao, Rongrong, Wang, Yan, Zhao, Shengjie, Yang, Yang, Zhao, Xiaolong, Wang, Wei, Zhang, Xumeng, Lv, Hangbing, Liu, Qi, Liu, Ming. Effects of Capping Electrode on Ferroelectric Properties of Hf_0.5Zr_0.5O₂ Thin Films. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.39, no.8, 1207-1210.

상세보기
Goh, Youngin, Cho, Sung Hyun, Park, Sang-Hee Ko, Jeon, Sanghun. Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode. Nanoscale, vol.12, no.16, 9024-9031.

상세보기
Müller, Johannes, Böscke, Tim S., Schröder, Uwe, Mueller, Stefan, Bräuhaus, Dennis, Böttger, Ulrich, Frey, Lothar, Mikolajick, Thomas. Ferroelectricity in Simple Binary ZrO₂ and HfO₂. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.12, no.8, 4318-4323.

상세보기
Hyuk Park, Min, Joon Kim, Han, Jin Kim, Yu, Moon, Taehwan, Seong Hwang, Cheol. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity. Applied physics letters, vol.104, no.7, 072901-.

상세보기
Jaffe, John E., Bachorz, Rafał A., Gutowski, Maciej. Low-temperature polymorphs ofZrO2andHfO2: A density-functional theory study. Physical review. B, Condensed matter and materials physics, vol.72, no.14, 144107-.

상세보기
Cho, Deok-Yong, Jung, Hyung Suk, Yu, Il-Hyuk, Yoon, Jung Ho, Kim, Hyo Kyeom, Lee, Sang Young, Jeon, Sang Ho, Han, Seungwu, Kim, Jeong Hwan, Park, Tae Joo, Park, Byeong-Gyu, Hwang, Cheol Seong. Stabilization of Tetragonal HfO₂ under Low Active Oxygen Source Environment in Atomic Layer Deposition. Chemistry of materials : a publication of the American Chemical Society, vol.24, no.18, 3534-3543.

상세보기

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