참고문헌 (33)

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2. Caravaca, M A, Miño, J C, Pérez, V J, Casali, R A, Ponce, C A. Ab initio study of the elastic properties of single and polycrystal TiO₂, ZrO₂ and HfO₂ in the cotunnite structure. Journal of physics, an Institute of Physics journal. Condensed matter, vol.21, no.1, 015501-.

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3. Kamiya, K., Sakka, S.. Thermal expansion of TiO2SiO2 and TiO2GeO2 glasses. Journal of non-crystalline solids, vol.52, no.1, 357-363.

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4. Kim, Han Joon, Park, Min Hyuk, Kim, Yu Jin, Lee, Young Hwan, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Hwang, Cheol Seong. A study on the wake-up effect of ferroelectric Hf_0.5Zr_0.5O₂films by pulse-switching measurement. Nanoscale, vol.8, no.3, 1383-1389.

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5. Onaya, Takashi, Nabatame, Toshihide, Sawamoto, Naomi, Ohi, Akihiko, Ikeda, Naoki, Nagata, Takahiro, Ogura, Atsushi. Ferroelectricity of Hf_xZr_1−xO₂ thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition. Microelectronic engineering, vol.215, 111013-.

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6. Proc IEEE Int Memory Workshop (IMW) Low temperature ($400~^{\circ}\text{C}$ ) ferroelectric Hf0.5Zr0.5O2 capacitors for next-generation FRAM applications kim 2017 1 

7. Kim, Si Joon, Narayan, Dushyant, Lee, Jae-Gil, Mohan, Jaidah, Lee, Joy S., Lee, Jaebeom, Kim, Harrison S., Byun, Young-Chul, Lucero, Antonio T., Young, Chadwin D., Summerfelt, Scott R., San, Tamer, Colombo, Luigi, Kim, Jiyoung. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget. Applied physics letters, vol.111, no.24, 242901-.

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8. Das, Dipjyoti, Gaddam, Venkateswarlu, Jeon, Sanghun. Demonstration of High Ferroelectricity (P $_{{r}}$ ~ 29 $\mu$C/cm²) in Zr Rich Hf_xZr_1–xO₂ Films. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.41, no.1, 34-37.

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9. Weeks, Stephen L., Pal, Ashish, Narasimhan, Vijay K., Littau, Karl A., Chiang, Tony. Engineering of Ferroelectric HfO₂–ZrO₂ Nanolaminates. ACS applied materials & interfaces, vol.9, no.15, 13440-13447.

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10. Nature Unveiling the double-well energy landscape in a ferroelectric layer hoffmann 2019 10.1038/s41586-018-0854-z 565 464 

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11. Xiao, Wenwu, Liu, Chen, Peng, Yue, Zheng, Shuaizhi, Feng, Qian, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue, Liao, Min, Zhou, Yichun. Performance Improvement of Hf_0.5Zr_0.5O₂-Based Ferroelectric-Field-Effect Transistors With ZrO₂ Seed Layers. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.40, no.5, 714-717.

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12. Onaya, Takashi, Nabatame, Toshihide, Sawamoto, Naomi, Ohi, Akihiko, Ikeda, Naoki, Nagata, Takahiro, Ogura, Atsushi. Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers. APL materials, vol.7, no.6, 061107-.

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13. Das, Dipjyoti, Jeon, Sanghun. High-k Hf_xZr_1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal. IEEE transactions on electron devices, vol.67, no.6, 2489-2494.

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14. Das, Dipjyoti, Kim, Taeho, Gaddam, Venkateswarlu, Shin, Changhwan, Jeon, Sanghun. Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf_0.5Zr_0.5O₂ bilayer system. Solid-state electronics, vol.174, 107914-.

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15. Appl Phys Lett Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature park 2013 102 

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16. Kim, Si Joon, Mohan, Jaidah, Summerfelt, Scott R., Kim, Jiyoung. Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances. JOM : the journal of the Minerals, Metals & Materials Society, vol.71, no.1, 246-255.

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17. arXiv 0912 0107 Mirror thermal noise in laser interferometer gravitational wave detectors operating at room and cryogenic temperature franc 2009 

18. Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Müller, Johannes, Kersch, Alfred, Schroeder, Uwe, Mikolajick, Thomas, Hwang, Cheol Seong. Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films. Advanced materials, vol.27, no.11, 1811-1831.

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19. Das, Dipjyoti, Gaddam, Venkateswarlu, Jeon, Sanghun. Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr_1-xO₂ Capacitors. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.42, no.3, 331-334.

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20. 10.1109/EDTM47692.2020.9117887 

    

21. Kim, Tae Yun, Kim, Sung Kyun, Kim, Sang-Woo. Application of ferroelectric materials for improving output power of energy harvesters. Nano convergence, vol.5, no.1, 30-.

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22. Nguyen, An Hoang-Thuy, Nguyen, Manh-Cuong, Cho, Seongyong, Nguyen, Anh-Duy, Kim, Hyewon, Seok, Yeongcheol, Yoon, Jiyeon, Choi, Rino. Double-gate thin film transistor with suspended-gate applicable to tactile force sensor. Nano convergence, vol.7, 31-.

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23. Yoon, Chankeun, Moon, Seungjun, Shin, Changhwan. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor. Nano convergence, vol.7, 19-.

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24. Fan, Zhen, Chen, Jingsheng, Wang, John. Ferroelectric HfO₂-based materials for next-generation ferroelectric memories. Journal of advanced dielectrics, vol.6, no.2, 1630003-.

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25. Kim, Si Joon, Mohan, Jaidah, Lee, Jaebeom, Lee, Joy S., Lucero, Antonio T., Young, Chadwin D., Colombo, Luigi, Summerfelt, Scott R., San, Tamer, Kim, Jiyoung. Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films. Applied physics letters, vol.112, no.17, 172902-.

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26. Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong. Review and perspective on ferroelectric HfO2-based thin films for memory applications. MRS Communications, vol.8, no.3, 795-808.

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27. Das, Dipjyoti, Buyantogtokh, Batzorig, Gaddam, Venkateswarlu, Jeon, Sanghun. Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfₓZr₁₋ₓO₂Capacitors. IEEE transactions on electron devices, vol.68, no.4, 1996-2002.

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28. Tu, Luqi, Wang, Xudong, Wang, Jianlu, Meng, Xiangjian, Chu, Junhao. Ferroelectric Negative Capacitance Field Effect Transistor. Advanced electronic materials, vol.4, no.11, 1800231-.

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29. Xiao, Wenwu, Liu, Chen, Peng, Yue, Zheng, Shuaizhi, Feng, Qian, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue, Liao, Min, Zhou, Yichun. Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements. Nanoscale research letters, vol.14, no.1, 254-.

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30. Gaddam, Vekateswarlu, Das, Dipjyoti, Jeon, Sanghun. Insertion of HfO₂ Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors. IEEE transactions on electron devices, vol.67, no.2, 745-750.

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31. Hoffmann, Michael, Fengler, Franz Paul Gustav, Max, Benjamin, Schroeder, Uwe, Slesazeck, Stefan, Mikolajick, Thomas. Negative Capacitance for Electrostatic Supercapacitors. Advanced energy materials, vol.9, no.40, 1901154-.

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32. Das, Dipjyoti, Gaddam, Venkateswarlu, Jeon, Sanghun. Ferroelectricity in Al₂O₃/Hf0.5Zr0.5O₂ Bilayer Stack: Role of Dielectric Layer Thickness and Annealing Temperature. Journal of semiconductor technology and science, vol.21, no.1, 62-67.

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33. 10.1109/EDTM47692.2020.9117881 

    

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