[논문]Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors

Park, Yeong-Hun; Yi, Boram; Kim, Seung-Hwan; Shim, Ju-Hyun; Song, Hyeong-Sub; Song, Hyun-Dong; Shin, Hyun-Jin; Lee, Hi-Deok; Yang, Ji-Woon

doi:10.1109/ted.2021.3087117

[해외논문] Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors

IEEE transactions on electron devices, v.68 no.8, 2021년, pp.4051 - 4056

Park, Yeong-Hun (Samsung Electronics, Foundry Division, Yongin, South Korea) , Yi, Boram (Korea University, Sejong, South Korea) , Kim, Seung-Hwan (SK Hynix, Research and Development Division, Icheon, South Korea) , Shim, Ju-Hyun (Korea University, Sejong, South Korea) , Song, Hyeong-Sub (Chungnam National University, Daejeon, South Korea) , Song, Hyun-Dong (Chungnam National University, Daejeon, South Korea) , Shin, Hyun-Jin (Chungnam National University, Daejeon, South Korea) , Lee, Hi-Deok (Chungnam National University, Daejeon, South Korea) , Yang, Ji-Woon (Korea University, Sejong, South Korea)

Abstract ▼ AI-Helper

Analytical models of low-frequency noise (LFN) characteristics for planar-type tunnel field-effect-transistors (TFETs) are proposed. A surface-potential-based current–voltage model is developed to physically represent the current fluctuation due to charge trapping/detrapping in the gate dielectric. An LFN model can be analytically derived from the current fluctuation with a reasonable approximation. The proposed model is verified using Technology Computer Aided Design (TCAD) and measurement data, which are in good agreement with each other. The analytical model can not only serve as a valuable reference and tool for low-power analog circuit design but also provide physical insights into the LFN of TFETs.

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DOI : 10.1109/TED.2021.3087117
IEEE : 저널 > 논문

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