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NTIS 바로가기IEEE access : practical research, open solutions, v.9, 2021년, pp.108480 - 108494
Kim, Bokyeom (Korea Advanced Institute of Science and Technology, School of Electrical Engineering, Daejeon, South Korea) , Shin, Mincheol (Korea Advanced Institute of Science and Technology, School of Electrical Engineering, Daejeon, South Korea)
Current nanometer-scale metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit short-channel, quantum, and self-heating effects, making modeling and analysis very complex. A few recent works have employed machine-learning (ML) techniques and neural networks (NN) to model the comp...
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