[논문]Surface state-induced barrierless carrier injection in quantum dot electroluminescent devices

Lee, Hyeonjun; Jeong, Byeong Guk; Bae, Wan Ki; Lee, Doh C.; Lim, Jaehoon

doi:10.1038/s41467-021-25955-z

[해외논문] Surface state-induced barrierless carrier injection in quantum dot electroluminescent devices 원문보기

Nature communications, v.12 no.1, 2021년, pp.5669 -

Lee, Hyeonjun (Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea) , Jeong, Byeong Guk (SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419 Republic of Korea) , Bae, Wan Ki (SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419 Republic of Korea) , Lee, Doh C. (Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Republic of Korea) , Lim, Jaehoon (Department of Energy Science, Centre for Artificial Atoms, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419 Republic of Korea)

Abstract ▼ AI-Helper

The past decade has witnessed remarkable progress in the device efficiency of quantum dot light-emitting diodes based on the framework of organic-inorganic hybrid device structure. The striking improvement notwithstanding, the following conundrum remains underexplored: state-of-the-art devices with seemingly unfavorable energy landscape exhibit barrierless hole injection initiated even at sub-band gap voltages. Here, we unravel that the cause of barrierless hole injection stems from the Fermi level alignment derived by the surface states. The reorganized energy landscape provides macroscopic electrostatic potential gain to promote hole injection to quantum dots. The energy level alignment surpasses the Coulombic attraction induced by a charge employed in quantum dots which adjust the local carrier injection barrier of opposite charges by a relatively small margin. Our finding elucidates how quantum dots accommodate barrierless carrier injection and paves the way to a generalized design principle for efficient electroluminescent devices employing nanocrystal emitters.Hybrid quantum dot light-emitting diodes exhibit barrier-less carrier injection despite a seemingly unfavourable energy landscape. Here, Lee et al. unravel the origin of this barrier-less carrier injection, showing the critical role of surface states of quantum dots.

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